Product Information

FS3401M A19T

FS3401M A19T electronic component of FOSAN

Datasheet
30V 4.1A 42mΩ@10V,4.2A 1400mW 2V@250uA P Channel 954pF@15V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
Manufacturer: FOSAN
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0467 ea
Line Total: USD 0.47

47374 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
22348 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 20
Multiples : 20
20 : USD 0.0267
200 : USD 0.0216
600 : USD 0.0188
3000 : USD 0.0159
9000 : USD 0.0144
21000 : USD 0.0136

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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Additional Infomation About Product

The FS3401M A19T P Channel MOSFET manufactured by FOSAN is a 30V, 4.1A device with a 42mO RDS(on) at 10V and 4.2A drain current rating. It has a gate to source capacitance of 954pF and a maximum power dissipation rating of 1400mW. Additionally, the device has a low gate threshold voltage of 2V at 250uA, making it suitable for use in low voltage applications. The device is ROHS compliant, and is also rated for operation from -55? to +150? at the junction temperature Tj. The package size for the device is SOT-23.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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