X-On Electronics has gained recognition as a prominent supplier of 6MBP15XSD-060-50 unclassified across the USA, India, Europe, Australia, and various other global locations. 6MBP15XSD-060-50 unclassified are a product manufactured by Fuji. We provide cost-effective solutions for unclassified, ensuring timely deliveries around the world.

6MBP15XSD-060-50 Fuji

6MBP15XSD-060-50 electronic component of Fuji
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Part No.6MBP15XSD-060-50
Manufacturer: Fuji
Category:Unclassified
Description: IGBT DIL 6-PACK, 15A, 600V WITH O/I
Datasheet: 6MBP15XSD-060-50 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 14.859 ea
Line Total: USD 14.86

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 12 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 14.859
10 : USD 14.6172
25 : USD 14.3832
100 : USD 14.1492
250 : USD 13.9308
1000 : USD 13.7124

   
Manufacturer
Product Category
Ipm Power Device
Voltage Rating Vces / Vdss
Current Rating Ic / Id
Isolation Voltage
Ipm Case Style
Ipm Series
Product Range
Svhc
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6MBP15XSD060-50 IGBT Modules IGBT MODULE (X series) 600V / 15A / IPM Features Low-side IGBTs are separate emitter type Short circuit protection Temperature sensor output function Under voltage protection Fault signal output function Input interface : TTL (3.3V/5V) Active high logic Applications AC 100 ~ 240V three phase inverter drive for small power AC motor drives (such as compressor motor drive for air conditioner, compressor motor drive for heat pump applications, fan motor drive, ventilator motor drive) Terminal assign and Internal circuit VB( U) Pin No. Pin Name Pin Description 3 NC 36 VB (V ) 3 VB(U) High-side bias voltage for U-phase IGBT driving 5 VB (W ) P 5 VB(V) High-side bias voltage for V-phase IGBT driving 7 3 2 7 VB(W) High-side bias voltage for W-phase IGBT driving IN (H U ) 9 IN(HU) Signal input for high side U-phase 9 IN V B 10 IN(HV) Signal input for high side V-phase Vc c OUT 11 IN(HW) Signal input for high side W-phase U G ND V s 30 12 VCCH High-side control supply 13 COM Common supply ground IN (H V ) 10 IN V B 14 IN(LU) Signal input for low side U-phase Vc c OUT 15 IN(LV) Signal input for low side V-phase V G ND V s 28 16 IN(LW) Signal input for low side W-phase 17 VCCL Low-side control supply IN (H W ) 11 I N V B 18 VFO Fault output V C C H 12 Vcc OUT 19 IS Over current sensing voltage input C OM W 20 COM Common supply ground 13 G ND V s 2 6 21 TEMP Temperature sensor output IN (L U ) 14 U I N 22 N(W) Negative bus voltage input for W-phase U OUT IN (L V ) 15 V 23 N(V) Negative bus voltage input for V-phase I N N ( U) 2 4 IN (L W) 24 N(U) Negative bus voltage input for U-phase 16 W I N 26 W Motor W-phase output V V C CL OUT 17 Vc c 28 V Motor V-phase output V FO N ( V) 18 Fo 2 3 30 U Motor U-phase output IS 32 P Positive bus voltage input 19 IS W OUT 36 NC No Connection C OM 20 G ND N (W ) TE MP 22 21 TE M P 1693b 1 MARCH 20166MBP15XSD060-50 IGBT Modules Absolute Maximum Ratings at Tj=25C, VCC=15V (unless otherwise specified) Items Symbol Characteristics Unit Remarks DC Bus Voltage VDC 450 V Note *1 Bus Voltage (Surge) VDC(Surge) 500 V Note *1 Collector-Emitter Voltage VCES 600 V Collector Current IC 25 15 A Note *2 VCC 15V, VB(*)15V 30 A Note *2, *3, *4 Peak Collector Current ICP 25 VCC 13V, VB(*)13V 20 A Note *2, *3, *4 Diode Forward current IF 25 15 A Note *2 Peak Diode Forward current IFP 25 30 A Note *2 Collector Power Dissipation PD IGBT 32.5 W per single IGBT TC=25C FWD Power Dissipation PD FWD 25.5 W per single FWD TC=25C Junction Temperature Tj 150 C Operating Junction Temperature TjOP -40 ~ +150 C High-side Supply Voltage VCCH -0.5 ~ 20 V Applied between VCCH-COM Low-side Supply Voltage VCCL -0.5 ~ 20 V Applied between VCCL-COM VVB(U)-COM Applied between High-side Bias Absolute Voltage VVB(V)-COM -0.5 ~ 620 V VB(U)-COM, VB(V)-COM, VVB(W)-COM VB(W)-COM VB(U) High-side Bias Voltage for VB(V) -0.5 ~ 20 V Note *4 IGBT gate driving VB(W) VU Applied between High-side Bias offset Voltage VV -5 ~ 600 V U-COM, V-COM, W-COM VW Note *5 -0.5 ~ VCCH+0.5 Input Signal Voltage VIN V Note *6 -0.5 ~ VCCL+0.5 Input Signal Current IIN 3 mA sink current Fault Signal Voltage VFO -0.5 ~ VCCL+0.5 V Applied between VFO-COM Fault Signal Current IFO 1 mA sink current Over Current sensing Input Voltage VIS -0.5 ~ VCCL+0.5 V Applied between IS-COM Junction Temperature Tj 150 C Operating Case Temperature TC -40 ~ +125 C See Fig.1-1 Storage Temperature Tstg -40 ~ +125 C Isolation Voltage Viso AC 1500 Vrms Sine wave,60Hz t=1min , Note *7 Note *1 : Applied between P-N(U),P-N(V),P-N(W) Note *2 : Pulse width and duty were limited by Tjmax. Note *3 : VCC is applied between VCCH-COM,VCCL-COM. Note *4 : VB(*) is applied between VB(U)-U,VB(V)-V, VB(W)-W. Note *5 : Over 13.0V applied between VB(U)-U,VB(V)-V, VB(W)-W. This IPM module might make incorrect response if the high-side bias offset voltage is less than -5V. Note *6 : Applied between IN(HU)-COM,IN(HV)-COM,IN(HW)-COM,IN(LU)-COM,IN(LV)-COM,IN(LW)-COM. Note *7 : Applied between shorted all terminal and IMS (Insulated Metal Substrate). 1693b 2 3 MARCH 2016 Control circuit block Inverter block

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