TM GD2X75MPS17N 1700V 150A SiC Schottky MPS Diode Silicon Carbide Schottky Diode VRRM = 1700 V F (T = 127C) I C = 150 A * QC = 1048 nC * Features Package Gen4 Thin Chip Technology for Low V F A A Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F RoHS Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Posivti e Temperature Coe cient of V F SOT-227 REACH K K Low V for High Temperature Operation F Advantages Applications Improved System E ciency EV Fast Chargers High System Reliability Solar Inverters Optimal P rice Performance Wind Energy Converters Reduced Cooling Requirements Train Auxiliary Power Supplies Increased System Power Density High Frequency Rectiers Zero Reverse Recovery Current Switched Mode Power Supplies Easy to Parallel without Thermal Runaway Motor Drives Improved System E ciency Pulsed Power Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage (Per Leg) V 1700 V RRM TC = 75C, D = 1 115 / 230 Continuous Forward Current (Per Leg / Per Device) I T = 100C, D = 1 97 / 194 A Fig. 4 F C T = 127C, D = 1 75 / 150 C T = 25C, t = 10 ms 750 Non-Repetitive Peak Forward Surge Current, Half Sine C P I A F,SM Wave (Per Leg) T = 150C, t = 10 ms 600 C P Repetitive Peak Forward Surge Current, Half Sine Wave TC = 25C, tP = 10 ms 450 I A F,RM (Per Leg) TC = 150C, tP = 10 ms 315 Non-Repetitive Peak Forward Surge Current (Per Leg) I T = 25C, t = 10 s 3750 A F,MAX C P 2 2 2 i t Value (Per Leg) i dt T = 25C, t = 10 ms 2812 A s C P Non-Repetitive Avalanche Energy (Per Leg) EAS L = 0.5 mH, IAS = 75 A 1270 mJ Diode Ruggedness (Per Leg) dV/dt V = 0 ~ 1360 V 200 V/ns R Power Dissipation (Per Leg / Per Device) P T = 25C 556 / 1112 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C * Per Device Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N.pdf Page 1 of 7TM GD2X75MPS17N 1700V 150A SiC Schottky MPS Diode Electrical Characteristics (Per Leg) Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 75 A, T = 25C 1.6 1.8 F j Diode Forward Voltage VF V Fig. 1 I = 75 A, T = 175C 2.4 F j V = 1700 V, T = 25C 2 10 R j Reverse Current I A Fig. 2 R V = 1700 V, T = 175C 41 R j VR = 600 V 358 Total Capacitive Charge Q nC Fig. 7 C V = 1200 V 524 R IF IF,MAX dI /dt = 200 A/s F V = 600 V R Switching Time tS < 10 ns V = 1200 V R VR = 1 V, f = 1MHz 4577 Total Capacitance C pF Fig. 6 VR = 1200 V, f = 1MHz 252 Thermal/Package Characteriscsti Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.27 C/W Fig. 9 thJC (Per Leg) Weight W 28 g T Mounting Torque T Screws to Heatsink 1.5 Nm M Terminal Connection Torque TC M4 Screws 1.3 Nm t = 1s (50/60 Hz) 3000 Isolation Voltage(RMS) V V ISO t = 60s (50/60 Hz) 2500 d Terminal to Terminal 10.5 Ctt Creepage Distance on Surface mm d Terminal to Backside 8.5 Ctb dStt Terminal to Terminal 3.2 Striking Distance Through Air mm dStb Terminal to Backside 6.8 Jul. 20 Rev 1 www.genesicsemi.com/sic-schottky-mps/GD2X75MPS17N/GD2X75MPS17N.pdf Page 2 of 7