GD5F1GQ5REYIGR Gigadevice

GD5F1GQ5REYIGR electronic component of Gigadevice
GD5F1GQ5REYIGR Gigadevice
GD5F1GQ5REYIGR NAND Flash
GD5F1GQ5REYIGR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GD5F1GQ5REYIGR NAND Flash across the USA, India, Europe, Australia, and various other global locations. GD5F1GQ5REYIGR NAND Flash are a product manufactured by Gigadevice. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

Part No. GD5F1GQ5REYIGR
Manufacturer: Gigadevice
Category: NAND Flash
Description: WSON-8(6x8) NAND FLASH ROHS
Datasheet: GD5F1GQ5REYIGR Datasheet (PDF)
Price (USD)
1: USD 3.374 ea
Line Total: USD 3.37 
Availability : 48
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
1$ 3.374
10$ 2.137
30$ 1.7021
100$ 1.4751
500$ 1.3721
1000$ 1.3272

Availability 48
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.374
10$ 2.137
30$ 1.7021
100$ 1.4751
500$ 1.3721
1000$ 1.3272

   
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We are delighted to provide the GD5F1GQ5REYIGR from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GD5F1GQ5REYIGR and other electronic components in the NAND Flash category and beyond.

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The GD5F1GQ5REYIGR is a WSON-8(6x8) NAND Flash memory device manufactured by Gigadevice. It is RoHS compliant and is made of a high-density, single-level cell (SLC) NAND Flash memory, offering optimal performance and high reliability. The device provides 4KB block size, program and erase operations with single-cycle code and randomizer for industrial-grade data retention, and supports command-based 4-bit ONFI 2.1 and Toggle DDR 1.2 interfaces. It also has an advanced multiple-bit error correction code (ECC) algorithm for more reliable data storage.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
GigaDevice Semicon Beijing
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