Product Information

GHIS080A120S-A2

Product Image X-ON

Datasheet
IGBT BUCK CHOP 1200V 160A SOT227
Manufacturer: Global Power Technologies



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 30
Multiples : 30

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GHIS080A120S-A2
Global Power Technologies

30 : USD 62.283
N/A

Obsolete
     
Manufacturer
Global Power Technologies
Product Category
Unclassified
RoHS - XON
1 Icon ROHS
Packaging
-
Brand
Global Power Technologies
Factory Pack Quantity :
1
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Data Sheet GHIS080A120S-A2 Buck Chopper with V =1200V CES 0 Field Stop Trench IGBT + SiC SBD I = 80A @T = 100 C C C Features A E Field StopTrench Fast IGBT C - Low voltage drop G - Low tail current - Switching frequency up to 50 kHz - Low leakage current Chopper SiC Schottky Diode - Zero reverse recovery current - Temperature Independent switching behavior - Positive temperature coefficient on VF Applications Solar inverters AC and DC motor control Power Factor Correction Aerospace Actuators Benefits Outstanding performance at high frequency operation Low switching losses Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant o Absolute Maximum Ratings (T =25 C unless otherwise specified) j Parameters Symbol Conditions Specifications Units Collector - Emitter Breakdown Voltage V 1200 V CES 0 Continuous Collector Current I T = 25 C 160 A C C 0 T = 100 C 80 A C V Gate-Emitter Voltage GES 20 V Pulsed Collector Current ICM 240 A 0 Maximum Power Dissipation P T = 25 C 480 W D C 0 T = 100 C 200 W C 0 Operating Junction Temperature T -55 ~ 150 C J 0 Storage Temperature T -55 ~ 150 C STG Page 1 of 8 Rev. 1.1 08/02/2018 Data Sheet GHIS080A120S-A2 o Electrical Characteristics (T=25 C unless otherwise specified) j Parameters Symbol Conditions Min Typ Max Units OFF Zero Gate Voltage Collector Current I V = 1200V, V = 0V -- -- 2 mA CES CE GE Gate-Emitter Leakage Current I V = 0V, V = 20V -- -- nA GES CE GE 500 ON Gate-Emitter Threshold Voltage V V = V , I = 80mA 4.5 6.5 V GE(TH) GE CE C 8.5 0 Collector-Emitter Saturation Voltage V V = 15V, I = 80A, T = 25 C -- 2.0 2.6 V CE(SAT) CE C J 0 V = 15V, I = 80A, T = 125 C -- 2.45 -- V CE C J DYNAMIC C Input Capacitance IES V = 30V, V = 0V, f = 1 MHz -- -- CE GE 10.3 nF C Output Capacitance OES -- 300 -- pF C Reverse Transfer Capacitance -- 200 -- RES pF SWITCHING t Turn-On Delay Time d(on) -- 60 -- ns t Rise Time -- 85 -- r ns V = 600V, I =80A CE C t Turn-Off Delay Time d(off) R = 10, V = 15V -- 200 -- G GE ns 0 Inductive Load, T =25 C J t Fall Time -- 60 -- f ns E Turn-On Switching Energy Loss ON -- 7.1 -- mJ E Turn-Off Switching Energy Loss -- 1.2 -- OFF mJ t Turn-On Delay Time d(on) -- 50 -- ns t Rise Time r -- 80 -- ns V = 600V, I =80A CE C Turn-Off Delay Time t -- 210 -- d(off) R = 10, V = 15V ns G GE 0 Inductive Load, T =125 C J t Fall Time f -- 120 -- ns E Turn-On Switching Energy Loss -- 7.6 -- ON mJ E Turn-Off Switching Energy Loss OFF -- 2.4 -- mJ Q Total Gate Charge g V = 600V, I =80A -- 640 960 CE C nC V = 15V GE Q Gate-Emitter Charge -- 80 120 ge nC Q Gate-Collector Charge gc -- 300 450 nC t Short Circuit Withstanding Time V = 600V, V = 15V -- -- 10 sc CE GE s 0 T =125 C J Page 2 of 8 Rev. 1.1 08/02/2018