Product Information

GP2D003A065A

Product Image X-ON

Datasheet
Diode Silicon Carbide Schottky 650 V 3A Through Hole TO-220-2
Manufacturer: Global Power Technologies



Price (USD)

1: USD 1.9181 ea
Line Total: USD 1.9181

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MOQ: 1 Multiples:1
Pack Size :   1
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0 - Global Stock


Ships to you between Wed. 29 Mar to Tue. 04 Apr

MOQ : 1
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GP2D003A065A
Global Power Technologies

1 : USD 1.9181
10 : USD 1.7288
25 : USD 1.6306
100 : USD 1.2717
250 : USD 1.2391

     
Manufacturer
Global Power Technologies
Product Category
Zener Diodes
Package / Case
TO - 220 - 2
Packaging
Tube
Series
Amp +
Datasheets
Gp2d003a065a
Product Photos
Gdp15s120a
Standard Package
50
Category
Zener Diodes
Family
Diodes, Rectifiers - Single
Diode Type
Silicon Carbide Schottky
Voltage - Dc Reverse Vr Max
650 V
Current - Average Rectified Io
3 A (DC)
Voltage - Forward Vf Max If
1.65 V @ 3a
Speed
Fast Recovery = 200Ma (Io)
Reverse Recovery Time Trr
-
Current - Reverse Leakage Vr
30 uA @ 650v
Capacitance Vr F
158p F @ 1v , 1mhz
Mounting Type
Through Hole
Supplier Device Package
TO - 220 - 2
Operating Temperature - Junction
- 55 C ~ 175 C
Online Catalog
Silicon Carbide Schottky
Other Names
1560 - 1034 - 5
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GP2D003A065A VDC 650 V Q 7 nC C I 3 A F 650V SiC Schottky Diode TM TM TM Amp+ Features Amp+ Benefits Amp+ Applications High surge current capable Unipolar rectifier Motor drives Zero reverse recovery current Zero switching loss Switch mode power supplies High bandwidth Higher efficiency Power factor correction Fast, temperature-independent switching Smaller heat sink Parallel devices with thermal stability Part # Package Marking GP2D003A065A TO-220-2L 2D003A065 Maximum Rating Symbol Conditions Value Unit T =25 C, T =175 C C j 10 I T =125 C, T =175 C Continuous forward current F C j 5 T =150 C, T =175 C C j 3 A T =25 C, t =8.3 ms 24 Surge non-repetitive forward current C p I F,SM sine halfwave T =150 C, t =8.3 ms 15 C p Non-repetitive peak forward current I T =25 C, t =10 ms F,max C p 60 T =25 C, t =8.3 ms C p 2 2 2 2 i t value i dt A s T =150 C, t =8.3 ms C p 1 T =25 C Repetitive peak reverse voltage V 650 V RRM j Turn-on slew rate, repetitive Diode dv/dt ruggedness dv/dt 50 V/ns Power dissipation P T =25 C 36 W C tot Operating & storage temperature T , T Continuous -55175 C J storage Soldering temperature T Wave soldering leads C solder 260 Mounting torque M3 Screw N-m 1 Electrical Characteristics, at T =25 C, unless otherwise specified j Values Static Characteristics Symbol Conditions Unit min. typ. max. DC blocking voltage V I =0.1mA R 650 - - DC o V I =3A, T =25 C - 1.45 1.65 F j Diode forward voltage V F o I =3A, T =175 C - 1.65 2.00 F j o V =650V, T =25 C - 3.0 30 R j Reverse current I mA R o V =650V, T =175 C - 50 300 R j 8/27/2015 Rev 2 www.gptechgroup.com p.1TM 650V SiC Schottky Diode Amp + GP2D003A065A Values Parameter Symbol Conditions Unit min. typ. max. AC Characteristics o Total capacitive charge Q V =650V, T =25 C - 7 - nC C R j di /dt=200 A/ ms F Switching time t - - <10 ns C T =150 C j V =1 V, f=1 MHz - 158 - R Total capacitance C V =325V, f=1 MHz - 13 - pF R V =650V, f=1 MHz R - 11 - Thermal Characteristics o Thermal resistance, junction-case R Package (flange) mount - 4.18 - C/W thJC Typical Performance Fig. 2 Reverse Characteristics (parameterized on Tj) Fig. 1 Forward Characteristics (parameterized on T ) j 1.E-02 25C 25C 4 1.E-03 75C 75C 1.E-04 125C 125C 3 175C 175C 1.E-05 2 1.E-06 1.E-07 1 1.E-08 0 1.E-09 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V (V) V (V) F R Fig. 3 Power Derating Fig. 4 Current Derating 40 35 o o 100% T =175 C T =175 C Duty cycle j j 35 30 50% 30 25 30% 25 20% 20 10% 20 15 15 10 10 5 5 0 0 25 75 125 175 25 75 125 175 o o T ( C) T ( C) C C 8/27/2015 Rev 2 www.gptechgroup.com p.2 P (W) I (A) Total F I (A) I (A) F R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free