IPB60R299CPA TM CoolMOS Power Transistor Product Summary V 600 V DS R 0.299 DS(on),max Q 22 nC g,typ Features Lowest figure-of-merit R x Q on g PG-TO263-3 Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for: DC/DC converters for Automotive Applications Type Package Marking IPB60R299CPA PG-TO263-3 6R299A Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C 11 Continuous drain current A D C T =100 C 7 C 1) 34 I T =25 C Pulsed drain current D,pulse C I =4.4 A, V =50 V Avalanche energy, single pulse E 290 mJ AS D DD 1),2) E I =4.4 A, V =50 V 0.44 Avalanche energy, repetitive t AR D DD AR 1),2) I 4.4 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0...480 V 50 V/ns DS V 20 Gate source voltage static V GS Power dissipation P T =25 C 96 W tot C T -40 ... 150 Operating temperature C j T Storage temperature -40 ... 150 stg Rev. 2.0 page 1 2009-09-09IPB60R299CPA Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous diode forward current 6.6 A S T =25 C C 1) I 34 Diode pulse current S,pulse 3) dv /dt 15 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.3 K/W thJC SMD version, device R on PCB, minimal -- 62 thJA footprint Thermal resistance, junction - SMD version, device ambient 2 on PCB, 6 cm cooling -35 - 4) area Soldering temperature, T MSL 1 - - 245 C sold reflow soldering Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 600 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =0,44 mA 2.5 3 3.5 GS(th) DS GS D V =600 V, V =0 V, DS GS I Zero gate voltage drain current -- 1A DSS T =25 C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =6.6 A, GS D Drain-source on-state resistance R - 0.27 0.299 DS(on) T =25 C j V =10 V, I =6.6 A, GS D - 0.73 T =150 C j Gate resistance R f =1 MHz, open drain - 1.9 - G Rev. 2.0 page 2 2009-09-09