SDP8405-011 Honeywell

SDP8405 Silicon Phototransistor FEATURES T-1 plastic package 20 (nominal) acceptance angle Consistent optical properties Wide sensitivity ranges Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes INFRA-22.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8405 is an NPN silicon phototransistor transfer Tolerance 3 plc decimals 0.005(0.12) molded in a T-1 clear plastic package. Transfer molding 2 plc decimals 0.020(0.51) of this device assures superior optical centerline performance compared to other molding processes200(5.08) Lead lengths are staggered to provide a simple method .180(4.57) .03(.76) of polarity identification020SQ.LEADTYP .05(1.27) (.51) .050 COLLECTOR (1.27) EMITTER .125 (3.18) DIA115 (2.92) .155 DIA500 (3.94) MIN. (12.7) .250 (6.35) MAX. DIM 100.ds4 Honeywell reserves the right to make changes in order to improve design and 116 h supply the best products possible.SDP8405 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 70 mW Operating Temperature Range -40C to 85C Storage Temperature Range -40C to 85C Soldering Temperature (5 sec) 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.18 mW/C. Honeywell reserves the right to make changes in order to improve design and 117 h supply the best products possible.