SE5470-004 Honeywell

SE5470-004 electronic component of Honeywell
SE5470-004 Honeywell
SE5470-004 Infrared Emitters - High Power
SE5470-004  Optoelectronics
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SE5470-004 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. SE5470-004 Infrared Emitters - High Power are a product manufactured by Honeywell. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

Part No. SE5470-004
Manufacturer: Honeywell
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power AlGaAs Emiting Diode TO-46 Metal Can Pkg
Datasheet: SE5470-004 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 92.76
25$ 29.8185
100$ 28.2536
500$ 26.8758
1000$ 25.0897
5000$ 24.5625
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 10.725
10$ 6.5452
25$ 6.5308
100$ 5.4382
250$ 5.4302
500$ 5.3425
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 13.5274
10$ 12.2484
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 11.2852
10$ 8.1082
100$ 6.9518
500$ 6.3599
1000$ 6.1534
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 106.081
25$ 28.951
100$ 28.1998
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Illumination Color
Brand
Forward Current
Forward Voltage
Lens Shape
Fall Time
Maximum Forward Current
Rise Time
Height
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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We are delighted to provide the SE5470-004 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SE5470-004 and other electronic components in the Infrared Emitters - High Power category and beyond.

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SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES TO-46 metal can package Choice of flat window or lensed package 90 or 20 (nominal) beam angle option 880 nm wavelength Higher output power than GaAs at equivalent drive currents Wide operating temperature range (55Cto+125C) Ideal for high pulsed current applications Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger INFRA-83.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE3470/5470 series consists of aluminum gallium Tolerance 3 plc decimals 0.005(0.12) arsenide infrared emitting diode mounted in a TO-46 2 plc decimals 0.020(0.51) metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 SE3470 series has glass lensed cans providing a narrow beam 45 .188 (4.77) angle. These devices typically exhibit 70% greater DIA178 (4.52) .046(1.17) power output than gallium arsenide devices at the same .500 .036(.91) .219 (5.56) DIA. forward current. The TO-46 packages offer high power (12.70) .208 (5.28) MIN100(2.54)DIA dissipation capability and are ideally suited for operation 1 NOM in hostile environments. 2 .048(1.22) .028(.71) .160 (4.06) DIA015 .137 (3.48) (0.36) .018 DIA. (.460) .153 (3.89) LEADS: .140 (3.56) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005a.ds4 SE5470 45 .188 (4.77) DIA178 (4.52) .046(1.17) .500 .036(.91) .219 (5.56) DIA. (12.70) .208 (5.28) MIN100(2.54)DIA 1 NOM 2 .048(1.22) .015 .160 (4.06) .028(.71) DIA. (0.36) .137 (3.48) .018 .200 DIA. (.460) 5.08 .247 (6.27) LEADS: .224 (5.89) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005b.ds4 Honeywell reserves the right to make changes in order to improve design and 32 h supply the best products possible.SE3470/5470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 100 mA Peak Forward Current 3 A (1s pulse width, 300 pps) Power Dissipation 150 mW Operating Temperature Range -55C to 125C Storage Temperature Range -65C to 150C Soldering Temperature (10 sec) 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 1.43 mW/C. Honeywell reserves the right to make changes in order to improve design and 33 h supply the best products possible.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Honeywell Clarostat
Honeywell Hobbs
Honeywell MICRO SWITCH
Honeywell / Clarostat
Honeywell / Hobbs
Honeywell / MICRO SWITCH
Honeywell Aerospace
Honeywell International
Honeywell International Inc
Honeywell International Inc.
HONEYWELL M&PS
Honeywell Microelectronics & Precision Sensors
HONEYWELL S&C
HONEYWELL S&C / CLAROSTAT
HONEYWELL S&C / HOBBS
HONEYWELL SAFETY
Honeywell Sensing and Control
Honeywell Sensing and Control EMEA
Honeywell Sensing and Productivity Solutions
Honeywell Sensing and Productivity Solutions T&M
Honeywell SSEC
Honeywell Test & Measurement
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