SEP8507-001 Honeywell

SEP8507 GaAs Infrared Emitting Diode FEATURES End-emitting plastic package 135 (nominal) beam angle 935 nm wavelength Low profile for design flexibility Mechanically and spectrally matched to SDP8407 phototransistor INFRA-18.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SEP8507 is a gallium arsenide infrared emitting Tolerance 3 plc decimals 0.008(0.20) diode molded in an end-emitting red plastic package. 2 plc decimals 0.020(0.51) The chip is positioned to emit radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification. DIM 009.cdr Honeywell reserves the right to make changes in order to improve design and 44 h supply the best products possible.SEP8507 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 60 mA Power Dissipation 100 mW Operating Temperature Range -40C to 85C Storage Temperature Range -40C to 85C Soldering Temperature (5 sec) 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.66 mW/C. Honeywell reserves the right to make changes in order to improve design and 45 h supply the best products possible.