IRLML6402 Hottech

IRLML6402 electronic component of Hottech
IRLML6402 Hottech
IRLML6402 MOSFETs
IRLML6402  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IRLML6402 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLML6402 MOSFETs are a product manufactured by Hottech. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IRLML6402
Manufacturer: Hottech
Category: MOSFETs
Description: SOT-23 MOSFETs ROHS
Datasheet: IRLML6402 Datasheet (PDF)
Price (USD)
10: USD 0.0704 ea
Line Total: USD 0.7 
Availability : 8545
  
Ship by Wed. 27 Aug to Mon. 01 Sep
QtyUnit Price
10$ 0.0704
100$ 0.0564
300$ 0.0494
3000$ 0.0286
6000$ 0.0258
9000$ 0.0243

Availability 8545
Ship by Wed. 27 Aug to Mon. 01 Sep
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0704
100$ 0.0564
300$ 0.0494
3000$ 0.0286
6000$ 0.0258
9000$ 0.0243

   
Manufacturer
Product Category
Package
Rohs
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We are delighted to provide the IRLML6402 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLML6402 and other electronic components in the MOSFETs category and beyond.

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The IRLML6402 with SOT-23 MOSFETs is a RoHS-compliant surface mount transistor manufactured by Hottech. It is a dual N-channel logic level enhancement type power field-effect transistor designed to operate with a low gate threshold voltage. This device is suitable for use in a wide range of circuits including load switch applications, general purpose switching, level shifting, and battery protection. It features a drain-source break down voltage of 60V and an on-state resistance of 3.4 ohms. This device can handle up to 250mA continuous current and is designed to operate up to 100KHz. It also has a very low gate drive voltage of 1.7 V. The package also includes built-in protection against electrostatic discharges.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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