CS4N60A3R Huajing

Name: CS4N60A3R
Brand: Huajing
SKU: CS4N60A3R_Huajing
Availability: OutOfStock
Rating: 5 (11 reviews)

CS4N60A3R electronic component of Huajing

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CS4N60A3R MOSFETs across the USA, India, Europe, Australia, and various other global locations. CS4N60A3R MOSFETs are a product manufactured by Huajing. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	CS4N60A3R
Manufacturer:	Huajing
Category:	MOSFETs
Description:	MOSFET N Trench 600V 4A 4V @ 250uA 2.5 O @ 2A,10V TO-251 (I-PAK) RoHS
Datasheet:	CS4N60A3R Datasheet (PDF)

Price (USD)

1: USD 0.448 ea
Line Total: USD 0.45

Availability : 0

Qty	Unit Price
1	$ 0.448
10	$ 0.3548
30	$ 0.315
75	$ 0.2652
525	$ 0.1641
975	$ 0.1551

CS4N60A3R More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Tue. 11 Nov to Mon. 17 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.448
10	$ 0.3548
30	$ 0.315
75	$ 0.2652
525	$ 0.1641
975	$ 0.1551

Specifications

Manufacturer Huajing Huajing
Product Category MOSFETs MOSFETs
Brand Huajing Huajing
Rohs Y Y
Package TO - 251 (I - PAK) TO - 251 (I - PAK)
Fet Type N Channel N Channel
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 4 A 4 A
Vgsth Max @ Id 4V @ 250uA 4V @ 250uA
Rds On Max @ Id Vgs 2.5O @ 2A,10V 2.5O @ 2A,10V
Power Dissipation-Max Ta 25°C 75 W 75 W
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 4 A 4 A
Drain Source On Resistance Rdson@Vgs Id 2.5 Ohms @10V , 2A 2.5 Ohms @10V , 2A
Power Dissipation Pd 75 W 75 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the CS4N60A3R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CS4N60A3R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The CS4N60A3R with MOSFET N Trench 600V 4A 4V @ 250uA 2.5 O @ 2A, 10V TO-251 (I-PAK) RoHS is a standard surface-mount n-channel enhancement-mode MOSFET manufactured by Huajing. It features 4V @ 250uA drain-source breakdown voltage, 2.5 Ohm @ 2A maximum drain-source on-resistance, 10V gate-source breakdown voltage, 4A maximum continuous drain current and 600V maximum drain-source off-state voltage. The device is packaged in a TO-251 (I-PAK) RoHS-compliant package and is suitable for use in a variety of commercial and industrial applications such as telecommunications, home and office appliances, light dimming, LED lighting, and motor control.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUAJING may also be referenced as

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