X-On Electronics has gained recognition as a prominent supplier of CS4N60A3R MOSFETs across the USA, India, Europe, Australia, and various other global locations. CS4N60A3R MOSFETs are a product manufactured by Huajing. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CS4N60A3R Huajing

Name: CS4N60A3R
Brand: Huajing
SKU: CS4N60A3R_Huajing
Availability: InStock
Rating: 5 (11 reviews)

CS4N60A3R electronic component of Huajing

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See Product Specifications

Part No.	CS4N60A3R
Manufacturer:	Huajing
Category:	MOSFETs
Description:	MOSFET N Trench 600V 4A 4V @ 250uA 2.5 O @ 2A,10V TO-251 (I-PAK) RoHS
Datasheet:	CS4N60A3R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.448 ea
Line Total: USD 0.45

Availability - 11
Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ: 1 Multiples: 1
Pack Size: 1

CS4N60A3R More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

11

Ship by Fri. 27 Jun to Wed. 02 Jul

MOQ : 1
Multiples : 1

1 : USD 0.448
10 : USD 0.3548
30 : USD 0.315
75 : USD 0.2652
525 : USD 0.1641
975 : USD 0.1551

Specifications

Manufacturer

Huajing Huajing

Product Category

MOSFETs MOSFETs

Brand

Huajing Huajing

Rohs

Y Y

Package

TO - 251 (I - PAK) TO - 251 (I - PAK)

Fet Type

N Channel N Channel

Drain To Source Voltagevdss

600 V 600 V

Continuous Drain Current Id @ 25°C

4 A 4 A

Vgsth Max @ Id

4V @ 250uA 4V @ 250uA

Rds On Max @ Id Vgs

2.5O @ 2A,10V 2.5O @ 2A,10V

Power Dissipation-Max Ta 25°C

75 W 75 W

Drain Source Voltage Vdss

600 V 600 V

Continuous Drain Current Id

4 A 4 A

Drain Source On Resistance Rdson@Vgs Id

2.5 Ohms @10V , 2A 2.5 Ohms @10V , 2A

Power Dissipation Pd

75 W 75 W

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

CS4N60A3R Alternative Parts

We are delighted to provide the CS4N60A3R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CS4N60A3R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The CS4N60A3R with MOSFET N Trench 600V 4A 4V @ 250uA 2.5 O @ 2A, 10V TO-251 (I-PAK) RoHS is a standard surface-mount n-channel enhancement-mode MOSFET manufactured by Huajing. It features 4V @ 250uA drain-source breakdown voltage, 2.5 Ohm @ 2A maximum drain-source on-resistance, 10V gate-source breakdown voltage, 4A maximum continuous drain current and 600V maximum drain-source off-state voltage. The device is packaged in a TO-251 (I-PAK) RoHS-compliant package and is suitable for use in a variety of commercial and industrial applications such as telecommunications, home and office appliances, light dimming, LED lighting, and motor control.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
11 Ship by Fri. 27 Jun to Wed. 02 Jul MOQ : 1 Multiples : 1	1 : USD 0.448 10 : USD 0.3548 30 : USD 0.315 75 : USD 0.2652 525 : USD 0.1641 975 : USD 0.1551

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