Product Information

SI-626-7440

SI-626-7440 electronic component of Ibase

Datasheet
Embedded Box Computers (DS), Book-Size Signage Player with MBD626 (w/ AMD E8860 for 6 x HDMI), with 7th Gen. Intel Core (Mobile) I5-7440EQ processor(cTDP at 35W), 2x 4GB DDR4/2133 SO-DIMM, 2.5 128GB SSD and 150W Power adpater.
Manufacturer: Ibase
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2348.5131 ea
Line Total: USD 2348.51

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1
1 : USD 2323.944
2 : USD 2321.6178
5 : USD 2291.8546
10 : USD 2234.5615

Read More Specifications

     
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RoHS - XON
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Additional Infomation About Product

PN: CMPA5259025F Package Type: 440219 CMPA5259025F 25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Crees CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Typical Performance Over 5.2-5.9 GHz (T = 25C) of Demonstration Amplifier C Parameter 5.2 GHz 5.5 GHz 5.9 GHz Units Small Signal Gain 33.6 31.9 32.2 dB Output Power 38.5 39.6 34.8 W Efficiency 53.5 51.3 47.2 % Input Return Loss -13.5 -15.5 -4.8 dB Note: 100 sec Pulse Width, 10% Duty Cycle, P = 22 dBm IN Features Applications Radar 30 dB Small Signal Gain 50% Efficiency at P SAT Operation up to 28 V High Breakdown Voltage Subject to change without notice. 1 www.cree.com/rf Rev 0.1 January 2019Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Storage Temperature T -55, +150 C STG Operating Junction Temperature T 225 C J Soldering Temperature T 245 C S Screw Torque 60 in-oz G Forward Gate Current I 8 mA 25C 1 Thermal Resistance, Junction to Case R 1.66 C/W 100 usec, 10%, 85C JC Case Operating Temperature T -40, +105 C C Notes: 1 Measured for the CMPA5259025F at P = 35 W. DISS Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Cree, Inc. Copyright 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the 4600 Silicon Drive Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CMPA5259025F Rev 0.1

HS Compliance

Tariff Desc

8542.31.00 63 No Hybrid integrated circuits

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits, Digital:

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