NTE2927 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Full Pack Type Package D Features: Low Drain Source ON Resistance: R = 0.58 Typ. DS(ON) High Forward Transfer Admittance: Y = 6.0 S Typ. fs G Low Leakage Current: I = 10A Max. (V = 600V) DSS DS Enhancement Model: V = 2.0V to 4.0V (V = 10V, I = 1mA) th DS D S Absolute Maximum Ratings: (T = +25C, Note 1 unless otherwise specified) A DrainSource Voltage, V ........................................................ 600V DSS GateSource Voltage, V ......................................................... 30 GSS Drain Current (Note 2), I D DC ......................................................................... 10A Pulsed ...................................................................... 40A Drain Power Dissipation (T = +25C), P ............................................ 45W C D Single Pulse Avalanche Energy (Note 3), E ....................................... 363mJ AS Avalanche Current, I .............................................................. 10A AR Repetitive Avalanche Energy (Note 4), E .......................................... 4.5mJ AR Channel Temperature, T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Channel toCase, R .................................. 2.78 C/W thCH C Thermal Resistance, Channel toAmbient, R ............................... 62.5 C/W thCH A Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc. may cause this device to decrease in reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device. Please handle with caution. Note 2. Make sure that the device channel temperature is below +150 C. Note 3. V = 90V, T = +25C (Initial), L = 6.36mH, R = 25, I = 10A DD ch G AR Note 4. Repetitive rating pulse width limited by maximum channel temperature. Rev. 914Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I V = 30V, V = 0V 1 A GSS GS DS Drain CutOff Current I V = 600V, V = 0V 10 A DSS DS GS DrainSource Breakdown Voltage V V = 0V, I = 10mA 600 V (BR)DSS GS D Gate Threshold Voltage V V = 10V, I = 1mA 2.0 4.0 V th DS D DrainSource OnResistance R V = 10V, I = 5A 0.58 0.75 DS(on) GS D Forward Transfer Admittance Y V = 10V, I = 5A 1.5 6.0 S fs DS D Input Capacitance C 1350 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 135 pF oss Reverse Transfer Capacitance C 6 pF rss TurnOn Delay Time t V = 200V, I = 5A, R = 40, 55 ns d(on) DD D L Note 5 Rise Time t 22 ns r TurnOff Delay Time t 100 ns d(off) Fall Time t 15 ns f Total Gate Charge Q I = 10A, V = 400V, V = 10V 25 nC g D DS GS GatetoSource Charge Q 16 nC gs GatetoDrain (Miller) Charge Q 9 nC gd Note 5. Duty Cycle 1%, t = 10s. w Source Drain Ratings and Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Continuous Drain Reverse Current I Note 2 10 A DR Pulsed Drain Reverse Current I Note 2 40 A DRP Diode Forward Voltage V I = 10A, V = 0V 1.7 V DSF DR GS Reverse Recovery Time t I = 10A, V = 0V, 1300 ns rr DR GS di /dt = 100A/s DR Reverse Recovery Charge Q 12 C rr Note 2. Make sure that the device channel temperature is below +150 C.