X-On Electronics has gained recognition as a prominent supplier of 95-685 Unclassified across the USA, India, Europe, Australia, and various other global locations. 95-685 Unclassified are a product manufactured by ICO-RALLY. We provide cost-effective solutions for Unclassified, ensuring timely deliveries around the world.

95-685 ICO-RALLY

95-685 electronic component of ICO-RALLY
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See Product Specifications
Part No.95-685
Manufacturer: ICO-RALLY
Category: Unclassified
Description: HEAT SHRINK TUBING KIT REFILL, 9.53MM, 11 PIECE, MULTI
Datasheet: 95-685 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.2549 ea
Line Total: USD 10.25

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 19 Jul to Thu. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 7.3986

   
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We are delighted to provide the 95-685 from our Unclassified category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 95-685 and other electronic components in the Unclassified category and beyond.

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NTE2927 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Full Pack Type Package D Features: Low Drain Source ON Resistance: R = 0.58 Typ. DS(ON) High Forward Transfer Admittance: Y = 6.0 S Typ. fs G Low Leakage Current: I = 10A Max. (V = 600V) DSS DS Enhancement Model: V = 2.0V to 4.0V (V = 10V, I = 1mA) th DS D S Absolute Maximum Ratings: (T = +25C, Note 1 unless otherwise specified) A DrainSource Voltage, V ........................................................ 600V DSS GateSource Voltage, V ......................................................... 30 GSS Drain Current (Note 2), I D DC ......................................................................... 10A Pulsed ...................................................................... 40A Drain Power Dissipation (T = +25C), P ............................................ 45W C D Single Pulse Avalanche Energy (Note 3), E ....................................... 363mJ AS Avalanche Current, I .............................................................. 10A AR Repetitive Avalanche Energy (Note 4), E .......................................... 4.5mJ AR Channel Temperature, T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Channel toCase, R .................................. 2.78 C/W thCH C Thermal Resistance, Channel toAmbient, R ............................... 62.5 C/W thCH A Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc. may cause this device to decrease in reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device. Please handle with caution. Note 2. Make sure that the device channel temperature is below +150 C. Note 3. V = 90V, T = +25C (Initial), L = 6.36mH, R = 25, I = 10A DD ch G AR Note 4. Repetitive rating pulse width limited by maximum channel temperature. Rev. 914Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I V = 30V, V = 0V 1 A GSS GS DS Drain CutOff Current I V = 600V, V = 0V 10 A DSS DS GS DrainSource Breakdown Voltage V V = 0V, I = 10mA 600 V (BR)DSS GS D Gate Threshold Voltage V V = 10V, I = 1mA 2.0 4.0 V th DS D DrainSource OnResistance R V = 10V, I = 5A 0.58 0.75 DS(on) GS D Forward Transfer Admittance Y V = 10V, I = 5A 1.5 6.0 S fs DS D Input Capacitance C 1350 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 135 pF oss Reverse Transfer Capacitance C 6 pF rss TurnOn Delay Time t V = 200V, I = 5A, R = 40, 55 ns d(on) DD D L Note 5 Rise Time t 22 ns r TurnOff Delay Time t 100 ns d(off) Fall Time t 15 ns f Total Gate Charge Q I = 10A, V = 400V, V = 10V 25 nC g D DS GS GatetoSource Charge Q 16 nC gs GatetoDrain (Miller) Charge Q 9 nC gd Note 5. Duty Cycle 1%, t = 10s. w Source Drain Ratings and Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Continuous Drain Reverse Current I Note 2 10 A DR Pulsed Drain Reverse Current I Note 2 40 A DRP Diode Forward Voltage V I = 10A, V = 0V 1.7 V DSF DR GS Reverse Recovery Time t I = 10A, V = 0V, 1300 ns rr DR GS di /dt = 100A/s DR Reverse Recovery Charge Q 12 C rr Note 2. Make sure that the device channel temperature is below +150 C.

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