BAS2103WE6327HTSA1

BAS21... Silicon Switching Diode For high-speed switching applications High breakdown voltage 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS21 BAS21-03W BAS21U Type Package Configuration Marking BAS21 SOT23 single JSs BAS21-03W SOD323 single D BAS21U SC74 parallel triple JSs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 200 V Diode reverse voltage V R 250 Peak reverse voltage V RM 250 mA Forward current I F 625 Peak forward current I FM Peak forward current I 625 mA FM Surge forward current, t = 10 s I 4 A FS Non-repetitive peak surge forward current I - FSM mW Total power dissipation P tot BAS21, T 70C 350 S BAS21-03W, T 124C 250 S BAS21U, T 122C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 Pb-containing package may be available upon special request 1 2007-04-19BAS21... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAS21 230 BAS21-03W 105 BAS21U 110 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 250 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 200 V - - 0.1 R V = 200 V, T = 150 C - - 100 R A V Forward voltage V F I = 100 mA - - 1 F I = 200 mA - - 1.25 F AC Characteristics - - 5 pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - - 50 ns rr I = 30 mA, I = 30 mA, measured at I = 3mA, F R R R = 100 L Test circuit for reverse recovery time D.U.T. Puls generator: t = 1s, D = 0.05 p t = 0.6ns, R = 50 r i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, C 1pF r EHN00018 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-19