BC817K16E6433HTMA1 Infineon

BC817K16E6433HTMA1 electronic component of Infineon
BC817K16E6433HTMA1 Infineon
BC817K16E6433HTMA1 Bipolar Transistors - BJT
BC817K16E6433HTMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC817K16E6433HTMA1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817K16E6433HTMA1 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC817K16E6433HTMA1
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Infineon Technologies Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Datasheet: BC817K16E6433HTMA1 Datasheet (PDF)
Price (USD)
11407: USD 0.0411 ea
Line Total: USD 468.83 
Availability : 174600
  
Ship by Thu. 30 Oct to Wed. 05 Nov
QtyUnit Price
11407$ 0.0411
100000$ 0.0344

Availability 174600
Ship by Thu. 30 Oct to Wed. 05 Nov
MOQ : 11407
Multiples : 1
QtyUnit Price
11407$ 0.0411
100000$ 0.0344

   
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Product Category
RoHS - XON
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We are delighted to provide the BC817K16E6433HTMA1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817K16E6433HTMA1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817K.../BC818K... NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BC817K-16 6As 1 = B 2 = E 3 = C - - - SOT23 BC817K-16W 6As 1 = B 2 = E 3 = C - - - SOT323 BC817K-25 6Bs 1 = B 2 = E 3 = C - - - SOT23 BC817K-25W 6Bs 1 = B 2 = E 3 = C - - - SOT323 BC817K-40 6Cs 1 = B 2 = E 3 = C - - - SOT23 BC817K-40W 6Cs 1 = B 2 = E 3 = C - - - SOT323 BC818K-16W 6Es 1 = B 2 = E 3 = C - - - SOT323 BC818K-40 6Gs 1 = B 2 = E 3 = C - - - SOT23 2011-09-19 1BC817K.../BC818K... Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BC817... 45 BC818... 25 Collector-base voltage V CBO BC817... 50 BC818... 30 5 Emitter-base voltage V EBO 500 mA Collector current I C 1000 Peak collector current I CM 100 Base current I B 200 Peak base current I BM mW Total power dissipation- P tot T 115 C, BC817K, BC818K 500 S T 130 C, BC817KW, BC818KW 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BC817K, BC818K 70 BC817KW, BC818KW 80 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-09-19 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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