BCR555E6327HTSA1 Infineon

BCR555 PNP Silicon Digital Transistor Built in bias resistor (R = 2.2 k , R = 10 k ) 1 2 2 3 Pb-free (RoHS compliant) package 1 Qualified according AEC Q101 C 3 R 1 R 2 1 2 B E EHA07183 Type Marking Pin Configuration Package BCR555 XDs SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 50 V Collector-emitter voltage V CEO 50 Collector-base voltage V CBO Input forward voltage V 20 i(fwd) Input reverse voltage V 5 i(rev) 500 mA Collector current I C 330 mW Total power dissipation- P tot T 79 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 215 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-07-28 1BCR555 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - Collector-emitter breakdown voltage V V (BR)CEO I = 100 A, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 A, I = 0 C E Collector-base cutoff current I - - 100 nA CBO V = 50 V, I = 0 CB E - - 0.65 mA Emitter-base cutoff current I EBO V = 5 V, I = 0 EB C 70 - - - DC current gain- h FE I = 50 mA, V = 5 V C CE 1) Collector-emitter saturation voltage V - - 0.3 V CEsat I = 50 mA, I = 2.5 mA C B Input off voltage V 0.4 - 1 i(off) I = 100 A, V = 5 V C CE Input on voltage V 0.5 - 1.4 i(on) I = 10 mA, V = 0.3 V C CE Input resistor R 1.5 2.2 2.9 k 1 Resistor ratio R /R 0.19 0.22 0.24 - 1 2 AC Characteristics - 150 - MHz Transition frequency f T I = 50 mA, V = 5 V, f = 100 MHz C CE 1 Pulse test: t < 300s D < 2% 2011-07-28 2