BF998E6327HTSA1 Infineon

BF998E6327HTSA1 electronic component of Infineon
BF998E6327HTSA1 Infineon
BF998E6327HTSA1 RF MOSFET Transistors
BF998E6327HTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BF998E6327HTSA1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF998E6327HTSA1 RF MOSFET Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

Part No. BF998E6327HTSA1
Manufacturer: Infineon
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors N-CH 12 V 30 mA
Datasheet: BF998E6327HTSA1 Datasheet (PDF)
Price (USD)
1: USD 0.403 ea
Line Total: USD 0.4 
Availability : 2842
  
Ship by Mon. 20 Oct to Fri. 24 Oct
QtyUnit Price
1$ 0.403
10$ 0.3138
30$ 0.2756
100$ 0.1712
500$ 0.1397
1000$ 0.1311

Availability 2842
Ship by Mon. 20 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.403
10$ 0.3138
30$ 0.2756
100$ 0.1712
500$ 0.1397
1000$ 0.1311

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF998E6327HTSA1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF998E6327HTSA1 and other electronic components in the RF MOSFET Transistors category and beyond.

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The Infineon BF998E6327HTSA1 RF MOSFET Transistors is a N-channel Metal Oxide Semiconductor Field Effect Transistor designed for use in switching and amplifier applications. It has a drain to source voltage rating of 12V and a low on-state resistance of 4.9 Ohms. It has a Pd of 600mW and a maximum drain current rating of 30mA. This device is ideal for applications that require a low-noise, low-power and high-current switching element or for amplifying signals. The device also features a low input capacitance of 1.2pF, making it suitable for stable higher frequency operation in high frequency circuit applications. Additionally, the device also has an optimized gate threshold voltage that helps reduce power consumption while operating.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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