BSC010N04LSI Infineon

BSC010N04LSI MOSFET TM TDSON-8 FL (enlarged source interconnection) OptiMOS Power-MOSFET, 40 V 8 7 6 Features 5 Optimized for synchronous rectification Integrated monolithic Schottky-like diode 1 5 2 6 Very low on-resistance R DS(on) 7 3 4 8 100% avalanche tested N-channel, logic level 1) 4 Qualified according to JEDEC for target applications 3 Pb-free lead plating RoHS compliant 2 1 Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enlarged source interconnection S1 8D Table 1 Key Performance Parameters S2 7D Parameter Value Unit S3 6D V 40 V DS G4 5D R 1.05 m DS(on),max I 275 A D Q OSS 83 nC Q G(0V..10V) 87 nC Type / Ordering Code Package Marking Related Links BSC010N04LSI TDSON-8 FL 010N04LI - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.5, 2020-05-15TM OptiMOS Power-MOSFET, 40 V BSC010N04LSI Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.5, 2020-05-15