BSS84P H6433 Infineon

BSS84P H6433 electronic component of Infineon
BSS84P H6433 Infineon
BSS84P H6433 MOSFETs
BSS84P H6433  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSS84P H6433 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS84P H6433 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSS84P H6433
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET P-Ch -60V -170mA SOT-23-3
Datasheet: BSS84P H6433 Datasheet (PDF)
Price (USD)
1: USD 0.38 ea
Line Total: USD 0.38 
Availability : 37401
  
Ship by Fri. 14 Nov to Tue. 18 Nov
QtyUnit Price
1$ 0.38
10$ 0.2638
100$ 0.1608
500$ 0.0913
1000$ 0.0682
2500$ 0.0605
5000$ 0.0539
10000$ 0.0473
20000$ 0.0429

Availability 300
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.067
100$ 0.0656
300$ 0.0648
1000$ 0.0431


Availability 37401
Ship by Fri. 14 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.38
10$ 0.2638
100$ 0.1608
500$ 0.0913
1000$ 0.0682
2500$ 0.0605
5000$ 0.0539
10000$ 0.0473
20000$ 0.0429

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS84P H6433 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS84P H6433 and other electronic components in the MOSFETs category and beyond.

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BSS84P SIPMOS Small-Signal-Transistor Product Summary Feature V -60 V DS P-Channel R 8 DS(on) Enhancement mode I -0.17 A D Logic Level PG-SOT-23 Avalanche rated 3 dv/dt rated 2 Qualified according to AEC Q101 1 VPS05161 Halogen-free according to IEC61249-2-21 Drain Tape and Reel Type Package Marking pin 3 Gate BSS84P PG-SOT-23 H 6327:3000pcs/r. YBs pin1 Source BSS84P PG-SOT-23H6433:10000pcs/r. YBs pin 2 Maximum Ratings, at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.17 A T =70C -0.14 A -0.68 Pulsed drain current I D puls T =25C A 2.6 mJ Avalanche energy, single pulse E AS I =-0.17 A , V =-25V, R =25 DD GS D E 0.036 Avalanche energy, periodic limited by T AR jmax Reverse diode dv/dt dv/dt -6 kV/s I =-0.17A, V =-48V, di/dt=-200A/s, T =150C DS jmax S Gate source voltage V V 20 GS Power dissipation P 0.36 W tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Rev 2.7 Page 1 2011-07-11 BSS84P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 200 K/W Thermal resistance, junction - soldering point R thJS (Pin 3) SMD version, device on PCB: R thJA min. footprint - - 350 2 1) 6 cm cooling area - - 300 Electrical Characteristics, at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. Static Characteristics V -60 - - V Drain-source breakdown voltage (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-20A D A Zero gate voltage drain current I DSS V =-60V, V =0, T =25C - -0.1 -1 DS GS A V =-60V, V =0, T =125C - -10 -100 DS GS A - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS - 8 12 Drain-source on-state resistance R DS(on) V =-4.5V, I =-0.14A GS D - 5.8 8 Drain-source on-state resistance R DS(on) V =-10V, I =-0.17A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.7 Page 2 2011-07-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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