FM24CL64B 2 64-Kbit (8 K 8) Serial (I C) Automotive F-RAM 64-Kbit (8 K 8) Serial (I2C) Automotive F-RAM Features Functional Description The FM24CL64B is a 64-Kbit nonvolatile memory employing an 64-Kbit ferroelectric random access memory (F-RAM) logically advanced ferroelectric process. A ferroelectric random access organized as 8 K 8 13 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 10 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 121 years 121-year data retention (See the Data Retention and while eliminating the complexities, overhead, and system-level Endurance table) reliability problems caused by EEPROM and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process 2 Unlike EEPROM, the FM24CL64B performs write operations at Fast 2-wire Serial interface (I C) bus speed. No write delays are incurred. Data is written to the Up to 1-MHz frequency memory array immediately after each byte is successfully 2 Direct hardware replacement for serial (I C) EEPROM transferred to the device. The next bus cycle can commence Supports legacy timings for 100 kHz and 400 kHz without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile Low power consumption memories. Also, F-RAM exhibits much lower power during writes 120 A (typ) active current at 100 kHz than EEPROM since write operations do not require an internally 6 A (typ) standby current elevated power supply voltage for write circuits. The 13 Voltage operation: V = 3.0 V to 3.6 V DD FM24CL64B is capable of supporting 10 read/write cycles, or 10 million times more write cycles than EEPROM. Automotive-E temperature: 40 C to +125 C These capabilities make the FM24CL64B ideal for nonvolatile 8-pin small outline integrated circuit (SOIC) package memory applications, requiring frequent or rapid writes. AEC Q100 Grade 1 compliant Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the Restriction of hazardous substances (RoHS) compliant long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24CL64B provides substantial benefits to users of serial 2 (I C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an automotive-e temperature range of 40 C to +125 C. For a complete list of related resources, click here. Logic Block Diagram Address 8 K x 8 Counter Latch F-RAM Array 13 8 Serial to Parallel SDA Data Latch Converter 8 SCL Control Logic WP A2-A0 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-84457 Rev. *F Revised August 14, 2015FM24CL64B Contents Pinout ................................................................................3 Capacitance ....................................................................10 Pin Definitions ..................................................................3 Thermal Resistance ........................................................ 10 Functional Overview ........................................................4 AC Test Loads and Waveforms ..................................... 11 Memory Architecture ........................................................4 AC Test Conditions ........................................................ 11 I2C Interface ......................................................................4 AC Switching Characteristics ....................................... 12 STOP Condition (P) .....................................................4 Power Cycle Timing ....................................................... 13 START Condition (S) ...................................................4 Ordering Information ...................................................... 14 Data/Address Transfer ................................................5 Ordering Code Definitions ......................................... 14 Acknowledge / No-acknowledge .................................5 Package Diagram ............................................................ 15 Slave Device Address .................................................6 Acronyms ........................................................................16 Addressing Overview ..................................................6 Document Conventions ................................................. 16 Data Transfer ..............................................................6 Units of Measure ....................................................... 16 Memory Operation ............................................................6 Document History Page ................................................. 17 Write Operation ...........................................................6 Sales, Solutions, and Legal Information ...................... 18 Read Operation ...........................................................7 Worldwide Sales and Design Support ....................... 18 Maximum Ratings .............................................................9 Products ....................................................................18 Operating Range ...............................................................9 PSoC Solutions ...................................................... 18 DC Electrical Characteristics ..........................................9 Cypress Developer Community ................................. 18 Data Retention and Endurance .....................................10 Technical Support ..................................................... 18 Example of an F-RAM Life Time in an AEC-Q100 Automotive Application .....................10 Document Number: 001-84457 Rev. *F Page 2 of 18