X-On Electronics has gained recognition as a prominent supplier of FM24V10-G F-RAM across the USA, India, Europe, Australia, and various other global locations. FM24V10-G F-RAM are a product manufactured by Infineon. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

FM24V10-G Infineon

FM24V10-G electronic component of Infineon
FM24V10-G Infineon
FM24V10-G F-RAM
FM24V10-G  Semiconductors

Images are for reference only
See Product Specifications
Part No. FM24V10-G
Manufacturer: Infineon
Category: F-RAM
Description: F-RAM 1M (128Kx8) 2.0-3.6V F-RAM
Datasheet: FM24V10-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.68 ea
Line Total: USD 16.68 
Availability - 1066
Ship by Wed. 21 May to Fri. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15
Ship by Fri. 30 May to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 27.3255
5 : USD 26.1504
30 : USD 25.3659

1066
Ship by Wed. 21 May to Fri. 23 May
MOQ : 1
Multiples : 1
1 : USD 16.68
10 : USD 14.333
25 : USD 14.014
50 : USD 12.914
100 : USD 12.683
250 : USD 12.463
485 : USD 12.1

   
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We are delighted to provide the FM24V10-G from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FM24V10-G and other electronic components in the F-RAM category and beyond.

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Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM24V10 2 1-Mbit (128K 8) Serial (I C) F-RAM 1-Mbit (128K 8) Serial (I2C) F-RAM Features Functional Description The FM24V10 is a 1-Mbit nonvolatile memory employing an 1-Mbit ferroelectric random access memory (F-RAM) logically advanced ferroelectric process. A ferroelectric random access organized as 128K 8 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See Data Retention and Endurance while eliminating the complexities, overhead, and system-level on page 13) reliability problems caused by EEPROM and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process 2 Unlike EEPROM, the FM24V10 performs write operations at bus Fast two-wire Serial interface (I C) speed. No write delays are incurred. Data is written to the Up to 3.4-MHz frequency memory array immediately after each byte is successfully 2 Direct hardware replacement for serial (I C) EEPROM transferred to the device. The next bus cycle can commence Supports legacy timings for 100 kHz and 400 kHz without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile Device ID and Serial Number memories. Also, F-RAM exhibits much lower power during writes Manufacturer ID and Product ID than EEPROM since write operations do not require an internally Unique Serial Number (FM24VN10) elevated power supply voltage for write circuits. The FM24V10 is 14 Low power consumption capable of supporting 10 read/write cycles, or 100 million times 175 A active current at 100 kHz more write cycles than EEPROM. 90 A (typ) standby current These capabilities make the FM24V10 ideal for nonvolatile 5 A (typ) sleep mode current memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write Low-voltage operation: V = 2.0 V to 3.6 V DD cycles may be critical, to demanding industrial controls where the Industrial temperature: 40 C to +85 C long write time of EEPROM can cause data loss. The 8-pin small outline integrated circuit (SOIC) package combination of features allows more frequent data writing with less overhead for the system. Restriction of hazardous substances (RoHS) compliant The FM24V10 provides substantial benefits to users of serial 2 (I C) EEPROM as a hardware drop-in replacement. The FM24VN10 is offered with a unique serial number that is read-only and can be used to identify a board or system. Both devices incorporate a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an industrial temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram 128 K x 8 Address Counter Latch F-RAM Array 17 8 Serial to Parallel SDA Data Latch Converter 8 8 SCL Device ID and WP Control Logic Serial Number A2-A1 Errata: STOP condition is optional for sleep mode entry. For more information, see Errata on page 19. Details include errata trigger conditions, scope of impact, available workarounds, and silicon revision applicability. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-84463 Rev. *J Revised December 26, 2018

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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