Product Information

FM24V10-G

FM24V10-G electronic component of Infineon

Datasheet
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 15.2 ea
Line Total: USD 15.2

109 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
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109 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

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FM24V10-G
Infineon

1 : USD 15.2
10 : USD 14.4325
25 : USD 14.225
100 : USD 14.0462
250 : USD 13.7654

357 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

FM24V10-G
Infineon

1 : USD 15.0825
10 : USD 14.57
25 : USD 14.2786

     
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Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comFM24V10 2 1-Mbit (128K 8) Serial (I C) F-RAM 1-Mbit (128K 8) Serial (I2C) F-RAM Features Functional Description The FM24V10 is a 1-Mbit nonvolatile memory employing an 1-Mbit ferroelectric random access memory (F-RAM) logically advanced ferroelectric process. A ferroelectric random access organized as 128K 8 14 memory or F-RAM is nonvolatile and performs reads and writes High-endurance 100 trillion (10 ) read/writes similar to a RAM. It provides reliable data retention for 151 years 151-year data retention (See Data Retention and Endurance while eliminating the complexities, overhead, and system-level on page 13) reliability problems caused by EEPROM and other nonvolatile NoDelay writes memories. Advanced high-reliability ferroelectric process 2 Unlike EEPROM, the FM24V10 performs write operations at bus Fast two-wire Serial interface (I C) speed. No write delays are incurred. Data is written to the Up to 3.4-MHz frequency memory array immediately after each byte is successfully 2 Direct hardware replacement for serial (I C) EEPROM transferred to the device. The next bus cycle can commence Supports legacy timings for 100 kHz and 400 kHz without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile Device ID and Serial Number memories. Also, F-RAM exhibits much lower power during writes Manufacturer ID and Product ID than EEPROM since write operations do not require an internally Unique Serial Number (FM24VN10) elevated power supply voltage for write circuits. The FM24V10 is 14 Low power consumption capable of supporting 10 read/write cycles, or 100 million times 175 A active current at 100 kHz more write cycles than EEPROM. 90 A (typ) standby current These capabilities make the FM24V10 ideal for nonvolatile 5 A (typ) sleep mode current memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write Low-voltage operation: V = 2.0 V to 3.6 V DD cycles may be critical, to demanding industrial controls where the Industrial temperature: 40 C to +85 C long write time of EEPROM can cause data loss. The 8-pin small outline integrated circuit (SOIC) package combination of features allows more frequent data writing with less overhead for the system. Restriction of hazardous substances (RoHS) compliant The FM24V10 provides substantial benefits to users of serial 2 (I C) EEPROM as a hardware drop-in replacement. The FM24VN10 is offered with a unique serial number that is read-only and can be used to identify a board or system. Both devices incorporate a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an industrial temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram 128 K x 8 Address Counter Latch F-RAM Array 17 8 Serial to Parallel SDA Data Latch Converter 8 8 SCL Device ID and WP Control Logic Serial Number A2-A1 Errata: STOP condition is optional for sleep mode entry. For more information, see Errata on page 19. Details include errata trigger conditions, scope of impact, available workarounds, and silicon revision applicability. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-84463 Rev. *J Revised December 26, 2018

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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