Product Information

FM28V102A-TG

FM28V102A-TG electronic component of Infineon

Datasheet
F-RAM 1Mb, 60Mhz 64K x 16 FRAM

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 18.653 ea
Line Total: USD 18.65

321 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
321 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

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FM28V102A-TG
Infineon

1 : USD 18.653
10 : USD 17.664
25 : USD 17.48
50 : USD 17.2385
100 : USD 15.3755
270 : USD 14.95

     
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FM28V102A 1-Mbit (64 K 16) F-RAM Memory 1-Mbit (64 K 16) F-RAM Memory Industrial temperature: 40 C to +85 C Features 44-pin thin small outline package (TSOP) Type II 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K 16 Restriction of hazardous substances (RoHS) compliant Configurable as 128 K 8 using UB and LB 14 Functional Overview High-endurance 100 trillion (10 ) read/writes 151-year data retention (see the Data Retention and The FM28V102A is a 64 K 16 nonvolatile memory that reads Endurance table) and writes similar to a standard SRAM. A ferroelectric random NoDelay writes access memory or F-RAM is nonvolatile, which means that data Page mode operation to 30-ns cycle time is retained after power is removed. It provides data retention for Advanced high-reliability ferroelectric process over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of SRAM compatible battery-backed SRAM (BBSRAM). Fast write timing and high Industry-standard 64 K 16 SRAM pinout write endurance make the F-RAM superior to other types of 60-ns access time, 90-ns cycle time memory. Superior to battery-backed SRAM modules The FM28V102A operation is similar to that of other RAM No battery concerns devices and therefore, it can be used as a drop-in replacement Monolithic reliability for a standard SRAM in a system. Read cycles may be triggered True surface mount solution, no rework steps by CE or simply by changing the address and write cycles may Superior for moisture, shock, and vibration be triggered by CE or WE. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features Low power consumption make the FM28V102A ideal for nonvolatile memory applications Active current 7 mA (typ) requiring frequent or rapid writes. Standby current 120 A (typ) The device is available in a 400-mil 44-pin TSOP-II Sleep mode current 3 A (typ) surface mount package. Device specifications are guaranteed Low-voltage operation: V = 2.0 V to 3.6 V over the industrial temperature range 40 C to +85 C. DD For a complete list of related documentation, click here. Logic Block Diagram A 15-2 A 15-0 64 K x 16 F-RAM Array A 1-0 . CE Column Decoder UB, LB DQ 15-0 Control I/O Latch & Bus Driver WE Logic OE ZZ Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-91080 Rev. *E Revised August 12, 2015 Address Latch Row Decoder .FM28V102A Contents Pinout ................................................................................3 AC Switching Characteristics ......................................... 9 Pin Definitions ..................................................................3 SRAM Read Cycle ...................................................... 9 Device Operation ..............................................................4 SRAM Write Cycle ..................................................... 10 Memory Operation .......................................................4 Power Cycle and Sleep Mode Timing ........................... 14 Read Operation ...........................................................4 Functional Truth Table ................................................... 15 Write Operation ...........................................................4 Byte Select Truth Table .................................................. 15 Page Mode Operation .................................................4 Ordering Information ...................................................... 16 Pre-charge Operation ..................................................4 Ordering Code Definitions ......................................... 16 Sleep Mode .................................................................4 Package Diagram ............................................................ 17 SRAM Drop-In Replacement .......................................5 Acronyms ........................................................................18 Endurance ...................................................................6 Document Conventions ................................................. 18 Maximum Ratings .............................................................7 Units of Measure ....................................................... 18 Operating Range ...............................................................7 Document History Page ................................................. 19 DC Electrical Characteristics ..........................................7 Sales, Solutions, and Legal Information ...................... 20 Data Retention and Endurance .......................................8 Worldwide Sales and Design Support ....................... 20 Capacitance ......................................................................8 Products ....................................................................20 Thermal Resistance ..........................................................8 PSoC Solutions ...................................................... 20 AC Test Conditions ..........................................................8 Cypress Developer Community ................................. 20 Technical Support ..................................................... 20 Document Number: 001-91080 Rev. *E Page 2 of 20

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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