X-On Electronics has gained recognition as a prominent supplier of IPB065N10N3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB065N10N3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB065N10N3GATMA1 Infineon

IPB065N10N3GATMA1 electronic component of Infineon
IPB065N10N3GATMA1 Infineon
IPB065N10N3GATMA1 MOSFETs
IPB065N10N3GATMA1 Semiconductors

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See Product Specifications
Part No. IPB065N10N3GATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET
Datasheet: IPB065N10N3GATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
242: USD 1.9375 ea
Line Total: USD 468.88 
Availability - 7760
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ: 242  Multiples: 1
Pack Size: 1

 IPB065N10N3GATMA1 More Buying Options & Price Grid(s)

Availability Price Quantity
931
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 242
Multiples : 1
242 : USD 1.9375
500 : USD 1.8281
1000 : USD 1.7344
10000 : USD 1.625

7760
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 242
Multiples : 1
242 : USD 1.9375
500 : USD 1.8281
1000 : USD 1.7344
10000 : USD 1.625

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Brand
Configuration
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPB065N10N3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB065N10N3GATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

MOSFET Metal Oxide Semiconductor Field Effect Transistor TM OptiMOS OptiMOS3 Power-Transistor, 100 V IPB065N10N3 G Data Sheet Rev. 2.0 Final Power Management & MultimarketOptiMOS3 Power-Transistor , 100 V IPB065N10N3 G DPAK 1 Description Features N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 100 V DS Gate Pin 1 R 6.5 m DS(on),max Source Pin 3 I 80 A D Type / Ordering Code Package Marking Related Links IPB065N10N3 G PG-TO 263-3 065N10N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2014-07-04

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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