X-On Electronics has gained recognition as a prominent supplier of IPB160N04S4H1ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB160N04S4H1ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB160N04S4H1ATMA1 Infineon

Hot IPB160N04S4H1ATMA1 electronic component of Infineon
IPB160N04S4H1ATMA1 Infineon
IPB160N04S4H1ATMA1 MOSFETs
IPB160N04S4H1ATMA1  Semiconductors

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See Product Specifications
Part No. IPB160N04S4H1ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2
Datasheet: IPB160N04S4H1ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.6 ea
Line Total: USD 2.6 
Availability - 1153
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1153
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 2.6
10 : USD 1.632
100 : USD 1.309
250 : USD 1.298
500 : USD 1.188
1000 : USD 1.177
2000 : USD 1.133

827
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 215
Multiples : 1
215 : USD 2.1875
500 : USD 1.9687
1000 : USD 1.8125
10000 : USD 1.625
100000 : USD 1.3586

22310
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 1.4999

9700
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 1.3121

1542
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 215
Multiples : 1
215 : USD 2.1875
500 : USD 1.9687
1000 : USD 1.8125
10000 : USD 1.625
100000 : USD 1.3586

3705
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 85
Multiples : 1
85 : USD 3.068
129 : USD 2.028
159 : USD 1.638
500 : USD 1.55
1000 : USD 1.2625
2000 : USD 1.2545

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Series
Brand
Configuration
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IPB160N04S4H1ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB160N04S4H1ATMA1 and other electronic components in the MOSFETs category and beyond.

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IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 mW DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) Continuous drain current I 160 A T =25C, V =10V D C GS T =100 C, C 160 2) V =10 V GS 2) I T =25 C 640 Pulsed drain current D,pulse C E I =80 A Avalanche energy, single pulse 400 mJ AS D Avalanche current, single pulse I - 160 A AS V Gate source voltage - 20 V GS P T =25 C Power dissipation 167 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2012-02-14IPB160N04S4-H1 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.9 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =110 A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, DS GS I Zero gate voltage drain current - 0.05 1 A DSS T =25 C j V =18 V, V =0 V, DS GS - 1 20 2) T =85 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS R V =10 V, I =100 A Drain-source on-state resistance - 1.4 1.6 m DS(on) GS D Rev. 1.0 page 2 2012-02-14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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