X-On Electronics has gained recognition as a prominent supplier of IPB65R041CFD7ATMA1 mosfet across the USA, India, Europe, Australia, and various other global locations. IPB65R041CFD7ATMA1 mosfet are a product manufactured by Infineon. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

IPB65R041CFD7ATMA1 Infineon

IPB65R041CFD7ATMA1 electronic component of Infineon
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See Product Specifications
Part No.IPB65R041CFD7ATMA1
Manufacturer: Infineon
Category:MOSFET
Description: MOSFET HIGH POWER_NEW
Datasheet: IPB65R041CFD7ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.0625 ea
Line Total: USD 10.06

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 10.0625
10 : USD 8.763
25 : USD 8.602
100 : USD 7.4405
250 : USD 7.3715
500 : USD 6.7505
1000 : USD 6.3595

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif

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We are delighted to provide the IPB65R041CFD7ATMA1 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB65R041CFD7ATMA1 and other electronic components in the MOSFET category and beyond.

IPB65R041CFD7 MOSFET DPAK 650V CoolMOS CFD7 SJ Power Device The latest 650 V CoolMOS CFD7 extends the voltage class offering of tab the CFD7 family and is a successor to the 650 V CoolMOS CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As part of Infineons fast body diode portfolio, this new product series blends 2 all advantages of a fast switching technology together with superior hard 1 commutation robustness. The CoolMOS CFD7 technology meets 3 highest efficiency and reliability standards and furthermore supports high power density solutions. Features Drain Pin 2, Tab Ultra-fast body diode 650V break down voltage Best-in-class R DS(on) *1 Gate Reduced switching losses Pin 1 Low RDS(on) dependency over temperature Source *1: Internal body diode Pin 3 Benefits Excellent hard commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density solutions Outstanding light load efficiency in industrial SMPS applications Improved full load efficiency in industrial SMPS applications Price competitiveness over previous CoolMOS families Potential applications Suitable for Soft Switching topologies Optimized for phase-shift full-bridge (ZVS), LLC Applications Server, Telecom, EV Charging, Solar Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max RDS(on),max 41 m Q 102 nC g,typ I 211 A D,pulse E 400V 14.0 J oss Body diode di /dt 1300 A/s F Type / Ordering Code Package Marking Related Links IPB65R041CFD7 PG-TO263-3 65R041F7 see Appendix A Final Data Sheet 1 Rev. 2.0, 2020-10-19650V CoolMOS CFD7 SJ Power Device IPB65R041CFD7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.0, 2020-10-19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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