IPD122N10N3GATMA1 Infineon

IPD122N10N3GATMA1 electronic component of Infineon
IPD122N10N3GATMA1 Infineon
IPD122N10N3GATMA1 MOSFETs
IPD122N10N3GATMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPD122N10N3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD122N10N3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPD122N10N3GATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET TRENCH >=100V
N-channel Logic Level Trench MOSFET with low on-resistance.
Datasheet: IPD122N10N3GATMA1 Datasheet (PDF)
Price (USD)
764: USD 0.3403 ea
Line Total: USD 259.99 
Availability : 14816
  
Ship by Fri. 01 Aug to Thu. 07 Aug
QtyUnit Price
764$ 0.3403
793$ 0.328
1000$ 0.3173
2500$ 0.2961
5000$ 0.2881
10000$ 0.2811

Availability 1086
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 242
Multiples : 1
QtyUnit Price
242$ 1.0778
280$ 0.9289
283$ 0.9196
310$ 0.8409
313$ 0.8324
500$ 0.7822
1000$ 0.6314


Availability 23451
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3375
10$ 0.9828
100$ 0.7733
500$ 0.7293
1000$ 0.6941
2500$ 0.6204


Availability 14816
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 764
Multiples : 1
QtyUnit Price
764$ 0.3403
793$ 0.328
1000$ 0.3173
2500$ 0.2961
5000$ 0.2881
10000$ 0.2811


Availability 1086
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 280
Multiples : 1
QtyUnit Price
280$ 0.9289
283$ 0.9196
310$ 0.8409
313$ 0.8324
500$ 0.7822
1000$ 0.6314


Availability 1916
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 299
Multiples : 1
QtyUnit Price
299$ 0.871
330$ 0.7891
356$ 0.7319
1000$ 0.5925


Availability 130950
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.9247
70000$ 0.8449
105000$ 0.7861

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPD122N10N3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD122N10N3GATMA1 and other electronic components in the MOSFETs category and beyond.

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IPD122N10N3GATMA1 is an N-channel MOSFET from Infineon's Power MOSFET family. It has a continuous drain current of 120A, a drain source voltage of 100V, an RDS(on) at 4.1mO at a 10V gate source, and a power dissipation of 220W. It is suitable for use in various applications, such as in consumer electronics and automotive, where size and cost are important considerations.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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