IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 25 mW DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 35 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 26CN10N 25CN10N 26CN10N 26CN10N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 35 A D C T =100C 25 C 2) I T =25C 140 Pulsed drain current D,pulse C E I =35A, R =25W Avalanche energy, single pulse 65 mJ AS D GS I =35A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =100A/s, 6 kV/s T =175C j,max 3) V 20 V Gate source voltage GS Power dissipation P T =25C 71 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) see figure 3 3) T =150C and duty cycle D=0.01 for Vgs<-5V jmax Rev. 1.09 page 1 2013-07-09IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2.1 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient (TO220, TO262, TO263) 4) - - 40 6 cm2 cooling area minimal footprint - - 75 Thermal resistance, junction - ambient (TO252, TO251) 4) - - 50 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =39A Gate threshold voltage 2 3 4 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =80V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 1 100 nA GSS GS DS V =10V, I =35A, GS D R Drain-source on-state resistance - 19 25 mW DS(on) (TO252) V =10V, I =35A, GS D - 19 25 (TO251) V =10V, I =35A, GS D - 20 26 (TO263) V =10V, I =35A, GS D - 20 26 (TO220, TO262) Gate resistance R - 1.1 - G W V >2 I R , DS D DS(on)max Transconductance g 19 38 - S fs I =35A D 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.09 page 2 2013-07-09