IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 35 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD26N06S2L-35 PG-TO252-3-11 2N06L35 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C, V =10 V 30 A D C GS T =100 C, C 22 1) V =10 V GS 1) I T =25 C 120 Pulsed drain current D,pulse C E I =26A Avalanche energy, single pulse 80 mJ AS D Gate source voltage V 20 V GS P T =25 C Power dissipation 68 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18 IPD26N06S2L-35 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 2.2 K/W thJC Thermal resistance, junction - R - - 100 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 75 thJA 2 2) -- 50 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 55 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =26 A 1.2 1.6 2.0 GS(th) DS GS D V =55 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =55 V, V =0 V, DS GS - 1 100 1) T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =13 A -34 47 m DS(on) GS D R V =10 V, I =13 A Drain-source on-state resistance -27 35m DS(on) GS D Rev. 1.0 page 2 2006-07-18