IPN50R800CEATMA1 Infineon

IPN50R800CEATMA1 electronic component of Infineon
IPN50R800CEATMA1 Infineon
IPN50R800CEATMA1 MOSFETs
IPN50R800CEATMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPN50R800CEATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPN50R800CEATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPN50R800CEATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Datasheet: IPN50R800CEATMA1 Datasheet (PDF)
Price (USD)
1: USD 0.9088 ea
Line Total: USD 0.91 
Availability : 1841
  
Ship by Fri. 21 Nov to Tue. 25 Nov
QtyUnit Price
1$ 0.9088
10$ 0.575
100$ 0.3685
500$ 0.2926
1000$ 0.2651
3000$ 0.2442
6000$ 0.2354
9000$ 0.2277
24000$ 0.2233

Availability 1841
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9088
10$ 0.575
100$ 0.3685
500$ 0.2926
1000$ 0.2651
3000$ 0.2442
6000$ 0.2354
9000$ 0.2277
24000$ 0.2233


Availability 2809
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.868
5$ 0.7
25$ 0.6482


Availability 4576
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1292
Multiples : 1
QtyUnit Price
1292$ 0.3629
10000$ 0.3235
100000$ 0.271


Availability 23280
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1292
Multiples : 1
QtyUnit Price
1292$ 0.3629
10000$ 0.3235
100000$ 0.271


Availability 2077
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1292
Multiples : 1
QtyUnit Price
1292$ 0.3629
10000$ 0.3235
100000$ 0.271


Availability 2900
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1292
Multiples : 1
QtyUnit Price
1292$ 0.3629
10000$ 0.3235
100000$ 0.271


Availability 8730
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1292
Multiples : 1
QtyUnit Price
1292$ 0.3629
10000$ 0.3235
100000$ 0.271

   
Manufacturer
Product Category
Technology
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Gate Charge
Gate-Source Voltage
Drain Current
Power Dissipation
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We are delighted to provide the IPN50R800CEATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPN50R800CEATMA1 and other electronic components in the MOSFETs category and beyond.

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The IPN50R800CEATMA1 part is a SiC MOSFET Power Module produced by Infineon Technologies. The module features an integrated 200V, 50A SiC MOSFET with N channel configuration. This device is capable of providing superior performance with improved thermal and electrical characteristics. The module has an optimally designed integrated Half-Bridge layout that allows it to offer a higher current and efficiency than conventional designs. It also features overload and overvoltage protection features. This MOSFET module is used in applications such as automotive onboard chargers, HV power converters for industrial applications and battery management systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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