Key Parameters Features V 150 V Latest MOSFET Silicon technology DS Key parameters optimized for Class-D audio amplifier R typ. V = 10V 47 m DS(on) GS applications Low R for improved efficiency Q typ. 25.0 nC DS(on) g Low Q for better THD and improved efficiency g R max. 3.0 G(int) Low Q for better THD and lower EMI rr Low package stray inductance for reduced ringing and lower EMI Can deliver up to 250W per channel into 4 Load in Half-Bridge Configuration Amplifier Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant containing no lead or bromide Lead-Free (Qualified up to 260C Reflow) DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. TM TM The IRF6775MPbF device utilizes DirectFET packaging technology. DirectFET packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI TM performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The TM DirectFET package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 150 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 28 D C I T = 25C Continuous Drain Current, V 10V 4.9 A D A GS I T = 70C Continuous Drain Current, V 10V 3.9 GS D A I Pulsed Drain Current 39 DM P T = 25C Maximum Power Dissipation 89 W D C P T = 25C Power Dissipation A 2.8 D Power Dissipation P T = 70C A 1.8 D E Single Pulse Avalanche Energy AS 33 mJ I Avalanche Current AR 5.6 A Linear Derating Factor 0.022 W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient JA 45 C/W R Junction-to-Ambient JA 12.5 R Junction-to-Ambient JA 20 R Junction-to-Case JC 1.4 R Junction-to-PCB Mounted J-PCB 1.4 Notes through are on page 2 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250 A V Drain-to-Source Breakdown Voltage 150 V GS D (BR)DSS V /T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 0.17 V/C D (BR)DSS J V = 10V, I = 5.6A R Static Drain-to-Source On-Resistance 47 56 DS(on) m GS D V V = V , I = 100A Gate Threshold Voltage 3.0 5.0 V DS GS D GS(th) I Drain-to-Source Leakage Current 20 A V = 150V, V = 0V DSS DS GS V = 120V, V = 0V, T = 125C 250 DS GS J I V = 20V GSS Gate-to-Source Forward Leakage 100 nA GS V = -20V Gate-to-Source Reverse Leakage -100 GS R Internal Gate Resistance 3.0 G(int) Dynamic T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 50V, I = 5.6A gfs Forward Transconductance 11 S DS D Q V = 75V g Total Gate Charge 25 36 DS Q Pre-Vth Gate-to-Source Charge 5.8 V = 10V gs1 GS Q I = 5.6A Post-Vth Gate-to-Source Charge 1.4 gs2 D Q Gate-to-Drain Charge 6.6 nC See Fig. 6 and 17 gd Q Gate Charge Overdrive 11 godr Q Switch Charge (Q + Q ) 8.0 sw gs2 gd V = 75V t Turn-On Delay Time 5.9 d(on) DD t I = 5.6A Rise Time 7.8 D r t R = 6.0 d(off) Turn-Off Delay Time 5.8 ns G V = 10V t Fall Time 15 GS f C V = 0V iss Input Capacitance 1411 GS V = 25V C Output Capacitance 193 oss DS C = 1.0MHz Reverse Transfer Capacitance 40 pF rss V = 0V, V = 1.0V, = 1.0MHz C Output Capacitance 1557 oss GS DS V = 0V, V = 120V, = 1.0MHz C Output Capacitance 93 GS DS oss C eff. V = 0V, V = 0V to 120V Effective Output Capacitance 175 GS DS oss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 28 MOSFET symbol S showing the (Body Diode) A G I Pulsed Source Current 39 integral reverse SM S p-n junction diode. (Body Diode) T = 25C, I = 5.6A, V = 0V V Diode Forward Voltage 1.3 V J S GS SD t Reverse Recovery Time 62 ns T = 25C, I = 5.6A, V = 25V DD rr J F di/dt = 100A/s Q Reverse Recovery Charge 164 nC rr Used double sided cooling , mounting pad with large heatsink. Repetitive rating pulse width limited by Mounted on minimum footprint full size board with max. junction temperature. metalized back and with small clip heatsink. Starting T = 25C, L = 0.53mH, R = 25, I = 11.2A. J G AS T measured with thermal couple mounted to top C Surface mounted on 1 in. square Cu board. (Drain) of part. Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J C eff. is a fixed capacitance that gives the same oss charging time as C while V is rising from 0 to 80% V . oss DS DSS