IRF7853PbF HEXFET Power MOSFET Applications Primary Side Switch in Bridge Topology V R max I DSS DS(on) D in Universal Input (36-75Vin) Isolated 18m VGS = 10V 100V 8.3A DC-DC Converters Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC A Converters A 1 8 S D Secondary Side Synchronous 2 7 Rectification Switch for 15Vout S D Suitable for 48V Non-Isolated 3 6 S D Synchronous Buck DC-DC Applications 4 5 G D Benefits Low Gate to Drain Charge to Reduce SO-8 Top View Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 8.3 A D A GS I T = 70C Continuous Drain Current, V 10V 6.6 D A GS I Pulsed Drain Current 66 DM P T = 25C Maximum Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C dv/dt Peak Diode Recovery dv/dt 5.1 V/ns T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 C/W JL Junction-to-Ambient (PCB Mount) R 50 JA Notes through are on page 8 www.irf.com 1 1/5/06IRF7853PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 14.4 18 m V = 10V, I = 8.3A DS(on) GS D V Gate Threshold Voltage 3.0 4.9 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 S V = 25V, I = 5.0A DS D Total Gate Charge 28 39 = 5.0A Q I g D Q Gate-to-Source Charge 7.8 nC V = 50V gs DS Q Gate-to-Drain Mille) Charge 10 V = 10V gd GS R Gate Resistance 1.4 G t Turn-On Delay Time 13 V = 50V d(on) DD t Rise Time 6.6 I = 5.0A r D t Turn-Off Delay Time 26 ns R = 6.2 d(off) G t Fall Time 6.0 V = 10V f GS C Input Capacitance 1640 V = 0V iss GS C Output Capacitance 310 V = 25V oss DS C Reverse Transfer Capacitance 71 pF = 1.0MHz rss C Output Capacitance 1600 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 180 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 320 V = 0V, V = 0V to 80V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 610 mJ AS Avalanche Current I 5.0 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current 2.3 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 66 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 5.0A, V = 0V SD J S GS t Reverse Recovery Time 45 68 ns T = 25C, I = 5.0A, V = 25V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 84 130 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com