X-On Electronics has gained recognition as a prominent supplier of IRF8734TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF8734TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF8734TRPBF Infineon

IRF8734TRPBF electronic component of Infineon
IRF8734TRPBF Infineon
IRF8734TRPBF MOSFETs
IRF8734TRPBF  Semiconductors

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See Product Specifications
Part No. IRF8734TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 30V 21A 2.35V @ 50uA 3.5 mΩ @ 21A,10V SOIC-8_150mil RoHS
Datasheet: IRF8734TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8975 ea
Line Total: USD 0.9 
Availability - 7310
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7310
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8975
10 : USD 0.6525
25 : USD 0.6252
100 : USD 0.4466
250 : USD 0.44
500 : USD 0.4169
1000 : USD 0.4015
2000 : USD 0.3806
4000 : USD 0.3432

2995
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 1.47
10 : USD 1.0178
35 : USD 0.5362
96 : USD 0.5068
2000 : USD 0.4872

11640
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 4000
Multiples : 4000
4000 : USD 0.3901

14681
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 448
Multiples : 1
448 : USD 0.5811
520 : USD 0.5005
524 : USD 0.4966
527 : USD 0.4942

1228
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 788
Multiples : 1
788 : USD 0.5951
1000 : USD 0.5489
10000 : USD 0.4894
100000 : USD 0.41

124160
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 4000
Multiples : 4000
4000 : USD 0.4226

   
Manufacturer
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Power Dissipation
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We are delighted to provide the IRF8734TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF8734TRPBF and other electronic components in the MOSFETs category and beyond.

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PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications V R max Qg (typ.) DSS DS(on) Synchronous MOSFET for Notebook 3.5m V = 10V 30V 20nC GS Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D Very Low R at 4.5V V DS(on) GS 3 6 S D Low Gate Charge 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Max. Units V 30 Drain-to-Source Voltage DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 21 I T = 25C GS D A Continuous Drain Current, V 10V 17 A I T = 70C A GS D I Pulsed Drain Current 168 DM 2.5 P T = 25C Power Dissipation D A W 1.6 P T = 70C Power Dissipation A D Linear Derating Factor 0.02 W/C Operating Junction and -55 to + 150 T J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 50 JA Notes through are on page 10 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 2/12/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.023 V/C DSS J D R V = 10V, I = 21A DS(on) 2.9 3.5 GS D Static Drain-to-Source On-Resistance m V = 4.5V, I = 17A 4.2 5.1 GS D V GS(th) Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 50A DS GS D V Gate Threshold Voltage Coefficient -6.5 mV/C GS(th) V = 24V, V = 0V I Drain-to-Source Leakage Current 1.0 DS GS DSS A V = 24V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 GS GSS nA V = -20V Gate-to-Source Reverse Leakage -100 GS gfs Forward Transconductance 85 S V = 15V, I = 17A DS D Q Total Gate Charge 20 30 g Q V = 15V gs1 Pre-Vth Gate-to-Source Charge 5.2 DS Q V = 4.5V Post-Vth Gate-to-Source Charge 2.3 GS gs2 nC Q I = 17A Gate-to-Drain Charge 6.9 D gd Q Gate Charge Overdrive 5.4 See Figs. 16a &16b godr Q Switch Charge (Q + Q ) 9.2 sw gs2 gd V = 16V, V = 0V Q Output Charge 15 nC oss DS GS R Gate Resistance 1.7 3.1 G V = 15V, V = 4.5V t Turn-On Delay Time 13 d(on) DD GS t I = 17A r Rise Time 16 D ns t R = 1.8 Turn-Off Delay Time 15 G d(off) t See Figs. 15a &15b Fall Time 8.0 f C V = 0V Input Capacitance 3175 GS iss V = 15V C Output Capacitance 627 pF DS oss C Reverse Transfer Capacitance 241 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 216 mJ AS I Avalanche Current 17 A AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units I MOSFET symbol Continuous Source Current S 3.1 showing the (Body Diode) A I Pulsed Source Current integral reverse SM 168 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 17A, V = 0V SD J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 17A, V = 15V rr DD J F Q di/dt = 345A/s rr Reverse Recovery Charge 25 38 nC 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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