X-On Electronics has gained recognition as a prominent supplier of IRF9530NPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9530NPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9530NPBF Infineon

Hot IRF9530NPBF electronic component of Infineon
IRF9530NPBF Infineon
IRF9530NPBF MOSFETs
IRF9530NPBF  Semiconductors

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See Product Specifications
Part No. IRF9530NPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P Trench 100V 14A 4V @ 250uA 200 mΩ @ 8.4A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRF9530NPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.6228 ea
Line Total: USD 3.11 
Availability - 42636
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1624
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.4663

1940
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 429
Multiples : 1
429 : USD 0.6071
442 : USD 0.5889
480 : USD 0.5421
503 : USD 0.5174
1000 : USD 0.4562
2000 : USD 0.43

5838
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 650
Multiples : 1
650 : USD 0.403
1500 : USD 0.39
5000 : USD 0.3563

42636
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ : 5
Multiples : 5
5 : USD 0.6228
50 : USD 0.3633
150 : USD 0.287
500 : USD 0.2372
2000 : USD 0.2151
5000 : USD 0.2017

30045
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 1.0875
10 : USD 0.9648
25 : USD 0.6384
100 : USD 0.5522
500 : USD 0.4664
1000 : USD 0.4268
2000 : USD 0.396
5000 : USD 0.3927

72
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 1.876
10 : USD 1.3104
25 : USD 1.05
30 : USD 0.6412
82 : USD 0.6048
1000 : USD 0.5824

1372
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 467
Multiples : 1
467 : USD 0.5577
582 : USD 0.4472
641 : USD 0.4057

1940
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 429
Multiples : 1
429 : USD 0.6071

970
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.4663

27082
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 383
Multiples : 1
383 : USD 0.679

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the IRF9530NPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9530NPBF and other electronic components in the MOSFETs category and beyond.

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The IRF9530NPBF is a P-type metallic-oxide-semiconductor field-effect transistor (MOSFET) with a 100V maximum drain-source voltage and 14A maximum continuous drain current. It features a low gate-to-source voltage, a low drain-to-source on-state resistance, and an excellent switching performance. This MOSFET is a compact three-terminal power device with a TO-220-3 package which is RoHS compliant. It provides a trench MOSFET technology with a maximum 4V gate-to-source voltage, a 250uA gate current, a 200mO on-state resistance, and a 8.4A diode current limitation. This part is manufactured by the Infineon Technologies AG in Germany.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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