IRMOSFET IRFH5302PbF V 30 V DSS R max DS(on) 2.1 m ( V = 10V) GS Qg 29 nC (typical) Rg 1.6 (typical) I D 175 A PQFN 5X6 mm ( T = 25C) C (Bottom) Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (< 2.1 m) Lower Conduction Losses Low Thermal Resistance to PCB (< 1.2C/W) Enable better Thermal Dissipation 100% Rg tested Increased Reliability Low Profile (< 0.9mm) Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility results in Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable Part Number Package Type Note Form Quantity IRFH5302TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5302TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-to-Source Voltage DS 30 V V Gate-to-Source Voltage GS 20 V I T = 25C Continuous Drain Current, V 10V D A GS 32 I T = 70C Continuous Drain Current, V 10V D A GS 26 I T = 25C Continuous Drain Current, V 10V D C(Bottom) GS 175 A I T = 100C Continuous Drain Current, V 10V D C(Bottom) GS 111 I Pulsed Drain Current DM 700 P T = 25C Power Dissipation D A 3.6 W P T = 25C Power Dissipation D C(Bottom) 104 Linear Derating Factor 0.029 W/C T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Notes through are on page 9 1 Rev. 2.3, 2021-03-03 IRFH5302PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1.0mA BV / T D DSS J R Static Drain-to-Source On-Resistance 1.8 2.1 V = 10V, I = 50A DS(on) GS D m 2.8 3.5 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 100A DS GS D Gate Threshold Voltage Coefficient -6.8 mV/C V GS(th) I Drain-to-Source Leakage Current 5.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 180 S V = 15V, I = 50A DS D Q Total Gate Charge 76 nC V = 10V, V = 15V, I = 50A g GS DS D Q Total Gate Charge 29 41 g V = 15V Q Pre-Vth Gate-to-Source Charge 7.7 gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 4.4 gs2 GS nC Q Gate-to-Drain Charge 9.7 I = 50A D gd Q Gate Charge Overdrive 8.2 See Fig. 17a & 17b godr Q Switch Charge (Q + Q ) 14 sw gs2 gd Q Output Charge 19 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.6 2.5 G t Turn-On Delay Time 18 V = 15V, V = 4.5V d(on) DD GS t Rise Time 51 I = 50A D r ns t Turn-Off Delay Time 22 d(off) R =1.8 G t Fall Time 18 See Fig. 15 f C Input Capacitance 4400 V = 0V iss GS C Output Capacitance 890 V = 15V oss pF DS C Reverse Transfer Capacitance 360 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 130 mJ AS I Avalanche Current 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 104 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 700 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 50A, V = 15V rr J F DD Q Reverse Recovery Charge 32 48 nC di/dt = 300A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 1.2 JC Junction-to-Case R (Top) 15 JC C/W Junction-to-Ambient 35 R JA Junction-to-Ambient R (<10s) 22 JA 2 Rev. 2.3, 2021-03-03