PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features UltraFast: Optimized for high operating V = 1200V frequencies up to 40 kHz in hard switching, CES >200 kHz in resonant mode New IGBT design provides tighter V = 2.78V CE(on) typ. G parameter distribution and higher efficiency than previous generations V = 15V, I = 24A E GE C Optimized for power conversion SMPS, UPS and welding n-channel Industry standard TO-247AC package Lead-Free Benefits Higher switching frequency capability than competitive IGBTs Highest efficiency available Much lower conduction losses than MOSFETs More efficient than short circuit rated IGBTs TO-247AC Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 1200 V CES I T = 25C Continuous Collector Current 45 C C I T = 100C Continuous Collector Current 24 A C C I Pulsed Collector Current 180 CM I Clamped Inductive Load Current 180 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 170 mJ ARV P T = 25C Maximum Power Dissipation 200 D C W P T = 100C Maximum Power Dissipation 78 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.64 JC R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R Junction-to-Ambient, typical socket mount 40 JA Wt Weight 6 (0.21) g (oz) www.irf.com 1 04/26/04IRG4PH50UPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage 1.20 V/C V = 0V, I = 1.0mA (BR)CES J GE C 2.56 3.5 I = 20A C 2.78 3.7 I = 24A V = 15V C GE V Collector-to-Emitter Saturation Voltage V CE(ON) 3.20 I = 45A See Fig.2, 5 C 2.54 I = 24A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -13 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 23 35 S V = 100V, I = 24A fe CE C 250 V = 0V, V = 1200V GE CE I Zero Gate Voltage Collector Current 2.0 A V = 0V, V = 24V, T = 25C CES GE CE J 5000 V = 0V, V = 1200V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 160 250 I = 24A g C Q Gate - Emitter Charge (turn-on) 27 40 nC V = 400V See Fig. 8 ge CC Q Gate - Collector Charge (turn-on) 53 83 V = 15V gc GE t Turn-On Delay Time 35 d(on) t Rise Time 15 T = 25C r J ns t Turn-Off Delay Time 200 350 I = 24A, V = 960V d(off) C CC t Fall Time 290 500 V = 15V, R = 5.0 f GE G E Turn-On Switching Loss 0.53 Energy losses includetai on E Turn-Off Switching Loss 1.41 mJ See Fig. 9, 10, 14 off E Total Switching Loss 1.94 2.6 ts t Turn-On Delay Time 31 T = 150C d(on) J t Rise Time 18 I = 24A, V = 960V r C CC ns t Turn-Off Delay Time 320 V = 15V, R = 5.0 d(off) GE G t Fall Time 280 Energy losses includetai f E Total Switching Loss 5.40 See Fig. 11, 14 ts mJ E Turn-On Switching Loss 0.35 T = 25C, V = 15V, R = 5.0 on J GE G E Turn-Off Switching Loss 1.43 I = 20A, V = 960V off C CC mJ 1.78 2.9 Energy losses includetai E Total Switching Loss ts 4.56 See Fig. 9, 10, 11, 14, T = 150C J L Internal Emitter Inductance 13 nH Measured 5mm from package E C Input Capacitance 3600 V = 0V ies GE C Output Capacitance 160 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 31 = 1.0MHz res Notes: Repetitive rating pulse width limited by maximum Repetitive rating V = 20V, pulse width limited by GE junction temperature. max. junction temperature. ( See fig. 13b ) Pulse width 80s duty factor 0.1%. V = 80%(V ), V = 20V, L = 10H, R = 5.0, CC CES GE G Pulse width 5.0s, single shot. (See fig. 13a) 2 www.irf.com