HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint G 1 Low Profile (<1.1mm) V = -20V DSS Available in Tape and Reel 3 D Fast Switching R = 0.065 DS(on) 2 S Lead-Free Halogen-Free These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated Micro3 into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry s smallest footprint. This package, dubbed the Micro3 , is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Parameter Max. Units V Drain- Source Voltage -20 V DS I T = 25C Continuous Drain Current, V -4.5V -3.7 D A GS I T = 70C Continuous Drain Current, V -4.5V -2.2 A D A GS I Pulsed Drain Current -22 DM P T = 25C Power Dissipation 1.3 D A P T = 70C Power Dissipation 0.8 D A Linear Derating Factor 0.01 W/C E Single Pulse Avalanche Energy 11 mJ AS V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambient 75 100 JA www.irf.com 1 12/14/11 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.009 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.050 0.065 V = -4.5V, I = -3.7A GS D R Static Drain-to-Source On-Resistance DS(on) 0.080 0.135 V = -2.5V, I = -3.1A GS D V Gate Threshold Voltage -0.40 -0.55 -1.2 V V = V , I = -250 A GS(th) DS GS D g Forward Transconductance 6.0 S V = -10V, I = -3.7A fs DS D -1.0 V = -20V, V = 0V DS GS I Drain-to-Source Leakage Current DSS & -25 V = -20V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS % Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 8.0 12 I = -3.7A g D Q Gate-to-Source Charge 1.2 1.8 nC V = -10V gs DS Q Gate-to-Drain Mille) Charge 2.8 4.2 V = -5.0V gd GS t Turn-On Delay Time 350 V = -10V d(on) DD t Rise Time 48 I = -3.7A r D t Turn-Off Delay Time 588 R = 89 d(off) G t Fall Time 381 R = 2.7 f D C Input Capacitance 633 V = 0V iss GS C Output Capacitance 145 pF V = -10V oss DS C Reverse Transfer Capacitance 110 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -1.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -22 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -1.0A, V = 0V SD J S GS t Reverse Recovery Time 29 43 ns T = 25C, I = -1.0A rr J F Q Reverse RecoveryCharge 11 17 nC di/dt = -100A/ s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. Starting T = 25C, L = 1.65mH J R = 25, I = -3.7A. G AS For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com