X-On Electronics has gained recognition as a prominent supplier of IRLR120NTRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLR120NTRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLR120NTRPBF Infineon

IRLR120NTRPBF electronic component of Infineon
IRLR120NTRPBF Infineon
IRLR120NTRPBF MOSFETs
IRLR120NTRPBF  Semiconductors

Images are for reference only
See Product Specifications
Part No. IRLR120NTRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 100V 10A 2V @ 250uA 185 mΩ @ 6A,10V TO-252-2 (DPAK) RoHS
Datasheet: IRLR120NTRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.5376 ea
Line Total: USD 2.69 
Availability - 10621
Ship by Fri. 13 Jun to Wed. 18 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
48500
Ship by Fri. 06 Jun to Thu. 12 Jun
MOQ : 2000
Multiples : 2000
2000 : USD 0.325
4000 : USD 0.3125
6000 : USD 0.3062
8000 : USD 0.3062
10000 : USD 0.3

10621
Ship by Fri. 13 Jun to Wed. 18 Jun
MOQ : 5
Multiples : 5
5 : USD 0.5376
50 : USD 0.3209
150 : USD 0.257
500 : USD 0.1945
2000 : USD 0.177
4000 : USD 0.1664

2765
Ship by Wed. 04 Jun to Fri. 06 Jun
MOQ : 1
Multiples : 1
1 : USD 0.742
50 : USD 0.588
57 : USD 0.3304
156 : USD 0.3136
4000 : USD 0.301

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the IRLR120NTRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLR120NTRPBF and other electronic components in the MOSFETs category and beyond.

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The IRLR120NTRPBF is a N-type, 100V, 10A MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) manufactured by Infineon. It is contained within a TO-252-2 (DPAK) package, and adheres to RoHS standards. The maximum drain-source voltage is 100V and the maximum drain current is 10A. It achieves 2V @ 250uA, and features a low gate-source threshold voltage and a high power density. Furthermore, the gate-source capacitance at VGS= 0V is 185mΩ, and the drain-source On-State resistance is 6A, 10V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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