INA-912AHIR25.GR Lead Frame Axial LED Features Description 2.152.40mm with 1.80mm lens The INA-912AHIR25.GR is high brightness SMD Axial High Brightness LED. It is a 1.8mm Lens type LED which can be used Water Clear in various applications. Small double-end package EIA Std. package Recommended Solder Pattern Mono-color type Special packaging available upon request High reliability Applications Figure 1. INA-912AHIR25.GR Solder Pattern PCB mounted infrared sensor Infrared emitting for miniature light barrier Floppy disk drive Optoelectronic switch Smoke detector Package Dimensions in mm Figure 2. INA-912AHIR25.GR Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25 mm (.010) unless otherwise noted. Inolux Corporation Jan, 27, 2021 www.inolux-corp.com Proprietary & Confidential Page 1 INA-912AHIR25.GR Lead Frame Axial LED o Absolute Maximum Rating at 25 C (Note) o o Product Emission Color P (mW) I (mA) I * (A) V (V) T ( C) T ( C) d F FP R OP ST o o o o INA-912AHIR25.GR Infrared 90 50 1.00 5 -40 C~+80 C -40 C~+85 C Notes 1. Derate linearly as shown in derating curve. 2. Duty Factor = 10%, Frequency = 1 kHz Electrical Characteristics T = 25C (Note) A Viewing VF(V) (nm) Ee (mW/sr) Angle Emission Product IF(mA) IF=100mA, IF=100mA, Color IF=20mA tp=100s, 21/2 IF=20mA tp=100s, D P tp/T=0.01 tp/T=0.01 min typ max min typ max min typ max min typ max INA-912AHIR25.GR Infrared 20 - 940 50 25 0.8 1.2 1.5 - 1.6 1.8 3 6 - - 15 - Notes 1. Performance guaranteed only under conditions listed in above tables. 2. A luminous intensity is measured with a light sensor and filter combination that approximates the CIE eye-response curve. 3. 21/2 is the o -axis angle where the luminous intensity is 12 the peak intensity. 4. The dominant wavelength (d) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. ESD Precaution ATTENTION: Electrostatic Discharge (ESD) protection The symbol above denotes that ESD precaution is needed. ESD protection for GaP and AlGaAs based chips is necessary even though they are relatively safe in the presence of low static-electric discharge. Parts built with AlInGaP, GaN, or/and InGaN based chips are STATIC SENSITIVE devices. ESD precaution must be taken during design and assembly. If manual work or processing is needed, please ensure the device is adequately protected from ESD during the process. Please be advised that normal static precautions should be taken in the handling and assembly of this device to prevent damage or degradation which may be induced by electrostatic discharge (ESD). Inolux Corporation Jan, 27, 2021 www.inolux-corp.com Proprietary & Confidential Page 2