CPC3960 600V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION BV / R I (min) Package Description DSX DS(on) DSS BV (max) DGX The CPC3960 is a 600V, N-channel, depletion-mode, 600V 44 100mA SOT-223 Field Effect Transistor (FET) created using IXYS Integrated Circuits Divisions proprietary vertical DMOS process. Yielding a robust device with high input impedance, this process enables world class, high Features voltage MOSFET performance with an economical High Breakdown Voltage: 600V silicon gate architecture. On-Resistance: 44 max. at 25C Low V Voltage: -1.4 to -3.1V GS(off) As with all MOS devices, the FET structure prevents High Input Impedance thermal runaway and thermal-induced secondary Small Package Size: SOT-223 breakdown, which makes the CPC3960 ideal for use in high-power applications. Applications The CPC3960 is a highly reliable FET device that Current Regulator has been used extensively in IXYS Integrated Circuits Normally-On Switches Divisions Solid State Relays for industrial and Solid State Relays telecommunications applications. Converters Telecommunications The CPC3960 is available in the SOT-223 package. Power Supply Ordering Information Part Description CPC3960ZTR SOT-223: Tape and Reel (1000/Reel) Package Pinout Circuit Symbol D D 4 G 1 23 S G D S DS-CPC3960-R02 1 www.ixysic.comINTEGRATED CIRCUITS DIVISION CPC3960 Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 600 V device. Functional operation of the device at conditions beyond Gate-to-Source Voltage 15 V those indicated in the operational sections of this data sheet is Pulsed Drain Current 150 mA 1 not implied. Total Package Dissipation 1.8 W Operational Temperature -55 to +125 C Junction Temperature, Maximum +125 C Storage Temperature -55 to +125 C 1 Mounted on 1 x1 2 oz. Copper FR4 board. Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV V = -5.5V, I =100A 600 - - V DSX GS D Gate-to-Source Off Voltage V V = 15V, I =1A -1.4 - -3.1 V GS(off) DS D Change in V with Temperature dV /dT V = 15V, I =1A - - 4.5 mV/C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS Drain-to-Source Leakage Current I V = -5.5V, V =600V - - 1 A D(off) GS DS Saturated Drain-to-Source Current I V = 0V, V =15V 100 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R -- 44 DS(on) V = 0V, I =100mA, V =10V GS D DS Change in R with Temperature dR /dT - - 2.5 %/C DS(on) DS(on) Forward Transconductance G I = 50mA, V = 10V 100 - - m fs D DS Input Capacitance C V = -3.5V 100 ISS GS Common Source Output Capacitance C 6.8 V = 25V - -pF OSS DS Reverse Transfer Capacitance C 4.2 f= 1MHz RSS Source-Drain Diode Voltage Drop V V = -5V, I =150mA - 0.72 1 V SD GS SD Thermal Resistance Junction to Ambient - - 55 - JA C/W Junction to Case - - 23 - JC 2 R02 www.ixysic.com