CS 20-22moF1 V = V = 2200 V DRM RRM High Voltage Phase Control Thyristor I = 18 A T(AV) in High Voltage ISOPLUS i4-PAC I = 200 A TSM 5 V V Type RSM RRM V V DSM DRM V V 1 2300 2200 CS 20-22moF1 1 5 2 Features Thyristor high voltage thyristor Symbol Conditions Maximum Ratings - for line frequency V 2200 V - chip technology for long term stability DRM / RRM ISOPLUS i4-PAC I sine 180 T = 90C 18 A T(AV) C 1 high voltage package I square d = / T = 90C 16 A T(AV) 3 C - isolated back surface 200 I sine 180 t = 10 ms V = 0 V T = 25C A TSM R VJ - enlarged creepage towards heatsink - enlarged creepage between high (di/dt) T = T repetitive, I = 40 A 100 A/s cr VJ VJM T f = 50 Hz t = 200 s voltage pins p - application friendly pinout 2 V = / V D 3 DRM - high reliability I = 0.45 A non repetitive, I = 20 A 250 A/s G T - industry standard outline di /dt = 0.45 A/s G 2 (dv/dt) T = T V = / V 2500 V/s cr VJ VJM D 3 DRM Applications R = method 1 (linear voltage rise) GK controlled rectifiers - power supplies Symbol Conditions Characteristic Values - drives (T = 25C, unless otherwise specified) VJ AC switches typ. max. capacitor discharge control V I = 20 A T = 25C 1.3 1.5 V T T VJ - flash tubes T = 125C 1.3 - X-ray and laser generators VJ V V = 6 V 2.3 V GT D I 250 mA GT 2 V V = / V T = T 0.2 V GD D 3 DRM VJ VJM I 5 mA GD I t = 10 s V = 6 V 500 mA L p D I = 0.45 A di /dt = 0.45 A/s G G I V = 6 V R = 150 mA H D GK t V = V 2 s gd D DRM I = 0.45 A di /dt = 0.45 A/s G G I , I V = V V = V T = 25C 50 A R D R RRM D DRM VJ T = 125C 2 mA VJ R DC current 0.92 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20110923a 2011 IXYS All rights reserved 1 - 2CS 20-22moF1 Component Symbol Conditions Maximum Ratings T -40 ... +125 C VJ T -55 ... +125 C stg V I < 1 mA 50/60 Hz 2500 V~ ISOL ISOL F mounting force with clip 20...120 N C Symbol Conditions Characteristic Values min. typ. d , d A pin - K pin 7 mm S A pin - backside metal 5.5 mm R with heatsink compound 0.15 K/W thCH Weight 5.5 g Dimensions in mm (1 mm = 0.0394 ) Millimeter Inches Dim. A min max min max A2 E E1 A 4.83 5.21 0.190 0.205 A1 2.59 3.00 0.102 0.118 A2 1.17 2.16 0.046 0.085 b 1.14 1.40 0.045 0.055 b2 1.47 1.73 0.058 0.068 b4 2.54 2.79 0.100 0.110 c 0.51 0.74 0.020 0.029 D 20.80 21.34 0.819 0.840 D1 14.99 15.75 0.590 0.620 D2 1.65 2.03 0.065 0.080 D3 20.30 20.70 0.799 0.815 E 19.56 20.29 0.770 0.799 b4 E1 16.76 17.53 0.660 0.690 e 3.81 BSC 0.150 BSC e1 11.43 BSC 0.450 BSC L 19.81 21.34 0.780 0.840 L1 2.11 2.59 0.083 0.102 Q 5.33 6.20 0.210 0.244 3x b 3x b2 c R 4.57 0.100 0.180 2.54 1 2 5 e1 e W 0.10 0.004 - - A1 Die konvexe Form des Substrates ist typ. < 0.05 mm ber der Kunststoffoberflcheder Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic W surface level ofdevice bottom side IXYS reserves the right to change limits, test conditions and dimensions. 20110923a 2011 IXYS All rights reserved 2 - 2 L D R L1 Q D3 D1 D2