IXFK150N30P3 IXYS

IXFK150N30P3 electronic component of IXYS
IXFK150N30P3 IXYS
IXFK150N30P3 MOSFETs
IXFK150N30P3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFK150N30P3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFK150N30P3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFK150N30P3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET N-Channel: Power MOSFET w/Fast Diode
Datasheet: IXFK150N30P3 Datasheet (PDF)
Price (USD)
1: USD 23.023 ea
Line Total: USD 23.02 
Availability : 1568
  
Ship by Wed. 08 Oct to Fri. 10 Oct
QtyUnit Price
1$ 23.023
10$ 15.4
100$ 15.4

Availability 1568
Ship by Wed. 08 Oct to Fri. 10 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 23.023
10$ 15.4
100$ 15.4


Availability 97
Ship by Wed. 08 Oct to Fri. 10 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 24.738
3$ 23.38
25$ 22.624

   
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Rds On - Drain-Source Resistance
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We are delighted to provide the IXFK150N30P3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFK150N30P3 and other electronic components in the MOSFETs category and beyond.

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The IXFK150N30P3 is an IGBT module from IXYS Corporation designed for high power industrial applications. It is a Field Stop technology IGBT module with 150A rated collector current and a maximum of 3.0kV collector-emitter voltage. It is suitable for both hard switching or resonant switching applications. This module can be used in any application where a high power (>1000W) device is needed. It has a short circuit withstand rating of up to 25KA, with positive or negative gate drive and a very short switching time of less than 3µs.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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