IXTA16N50P IXYS

IXTA16N50P electronic component of IXYS
IXTA16N50P IXYS
IXTA16N50P MOSFETs
IXTA16N50P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTA16N50P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTA16N50P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTA16N50P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 16.0 Amps 500 V 0.4 Ohm Rds
Datasheet: IXTA16N50P Datasheet (PDF)
Price (USD)
1: USD 6.225 ea
Line Total: USD 6.22 
Availability - 32
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 6.225
10$ 4.389
100$ 2.475

Availability 32
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.225
10$ 4.389
100$ 2.475

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTA16N50P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTA16N50P and other electronic components in the MOSFETs category and beyond.

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TM PolarHT V = 500V IXTA16N50P DSS Power MOSFET I = 16A IXTP16N50P D25 R 400m DS(on) IXTQ16N50P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J TO-220 (IXTP) V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C 16 A D25 C G (TAB) D S I T = 25C, Pulse Width Limited by T 35 A DM C JM I T = 25C 16 A TO-3P (IXTQ) A C E T = 25C 750 mJ AS C dV/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 300 W D C G T - 55 ... +150 C J D (TAB) T 150 C S JM T - 55 ... +150 C stg G = Gate D = Drain T 1.6mm (0.062 in.) from Case for 10s 300 C L S = Source TAB = Drain T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-3P,TO-220) 1.13/10 Nm/lb.in. d Features Weight TO-263 2.5 g TO-220 3.0 g z International Standard Packages TO-3P 5.5 g z Avalanche Rated z Fast Intrinsic Diode z Low Package Inductance Symbol Test Conditions Characteristic Values Advantages (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z BV V = 0V, I = 250A 500 V High Power Density DSS GS D z Easy to Mount V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D z Space Savings I V = 30V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 50 A J z Switched-Mode and Resonant-Mode R V = 10V, I = 0.5 I , Note 1 400 m Power Supplies DS(on) GS D D25 z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Controls 2009 IXYS CORPORATION, All Rights Reserved DS99323F(05/09) IXTA16N50P IXTP16N50P IXTQ16N50P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 9 16 S fs DS D D25 C 2480 pF iss C V = 0V, V = 25V, f = 1MHz 237 pF oss GS DS C 18 pF rss t 23 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 70 ns d(off) R = 10 (External) G t 22 ns f Q 43 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 15 nC gs GS DS DSS D D25 Q 12 nC gd R 0.42 C/W thJC R (TO-3P) 0.25 C/W thCS (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 16 A TO-220 (IXTP) Outline S GS I Repetitive, Pulse Width Limited by T 64 A SM JM V I = 16A, V = 0V, Note 1 1.5 V SD F GS I = 16A, -di/dt = 100A/s t 400 ns F rr V = 100V, V = 0V R GS Note 1: Pulse Test, t 300s Duty Cycle, d 2%. TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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