Depletion Mode V = 1700V IXTT2N170D2 DSX MOSFET I > 2A IXTH2N170D2 D(on) R 6.5 DS(on) N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1700 V DSX J V T = 25 C to 150 C, R = 1M 1700 V DGX J GS V Continuous 20 V GSX G V Transient 30 V D GSM D (Tab) S P T = 25 C 568 W D C T - 55 ... +150 C G = Gate D = Drain J S = Source Tab = Drain T 150 C JM T - 55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Normally ON Mode Weight TO-268 4 g International Standard Packages TO-247 6 g Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = - 5V, I = 250A 1700 V DSX GS D Applications V V = 25V, I = 250 A - 2.5 - 4.5 V GS(off) DS D Audio Amplifiers I V = 20V, V = 0V 100 nA GSX GS DS Start-Up Circuits Protection Circuits I V = V , V = - 5V 25 A DSX(off) DS DSX GS Ramp Generators T = 125C 500A J Current Regulators R V = 0V, I = 1A, Note 1 6.5 Active Loads DS(on) GS D I V = 0V, V = 50V, Note 1 2 A D(on) GS DS 2017 IXYS CORPORATION, All Rights Reserved DS100418C(3/17)IXTT2N170D2 IXTH2N170D2 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 1A, Note 1 1.4 2.2 S fs DS D C 3650 pF iss C V = -10V, V = 25V, f = 1MHz 206 pF oss GS DS C 80 pF rss t 28 ns d(on) Resistive Switching Times t 58 ns r V = 5V, V = 850V, I = 1A GS DS D t 33 ns d(off) Terminals: 1 - Gate 2,4 - Drain R = 2 (External) G 3 - Source t 106 ns f Q 110 nC g(on) Q V = +5V, V = 850V, I = 1A 12 nC gs GS DS D Q 60 nC gd R 0.22 C/W thJC R TO-247 0.21 C/W thCS Safe-Operating-Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 1700V, I = 120mA, T = 75 C, Tp = 5s 204 W DS D C TO-247 Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J P V I = 2A, V = -10V, Note 1 0.75 1.30 V 1 2 3 SD F GS t 2.8 s rr I = 2A, -di/dt = 100A/ s F I 45.0 A RM V = 100V, V = -10V R GS Q 63.0 C RM e Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Note 1. Pulse test, t 300s, duty cycle, d 2%. Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537