IXTH500N04T2 IXYS

IXTH500N04T2 electronic component of IXYS
IXTH500N04T2 IXYS
IXTH500N04T2 MOSFETs
IXTH500N04T2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTH500N04T2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH500N04T2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTH500N04T2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET TRENCHT2 PWR MOSFET 40V 500A
Datasheet: IXTH500N04T2 Datasheet (PDF)
Price (USD)
1: USD 17.28 ea
Line Total: USD 17.28 
Availability - 265
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 17.28
10$ 12.617
120$ 9.845
510$ 9.471

Availability 265
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 17.28
10$ 12.617
120$ 9.845
510$ 9.471

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Height
Length
Series
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTH500N04T2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH500N04T2 and other electronic components in the MOSFETs category and beyond.

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Advance Technical Information TM TrenchT2 V = 40V IXTH500N04T2 DSS I = 500A Power MOSFET IXTT500N04T2 D25 R 1.6m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings V T = 25C to 175C40 V DSS J V T = 25C to 175C, R = 1M 40 V DGR J GS TO-268 (IXTT) V Transient 20 V GSM I T = 25C (Chip Capability) 500 A G D25 C I Lead Current Limit, RMS 160 A S LRMS I T = 25C, Pulse Width Limited by T 1250 A D (Tab) DM C JM I T = 25C 100 A A C E T = 25C 800 mJ G = Gate D = Drain AS C S = Source Tab = Drain P T = 25C 1000 W D C T -55 ... +175 C J T 175 C Features JM T -55 ... +175 C stg z International Standard Packages T 1.6mm (0.062in.) from Case for 10s 300 C z L 175C Operating Temperature T Plastic Body for 10 seconds 260 C z sold High Current Handling Capability z Avalanche Rated M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d z Fast Intrinsic Diode Weight TO-247 6 g z Low R TO-268 4 g DS(on) Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z Space Savings (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z High Power Density BV V = 0V, I = 1mA 40 V DSS GS D V V = V , I = 250A 1.5 3.5 V GS(th) DS GS D Applications I V = 20V, V = 0V 200 nA GSS GS DS Synchronous Buck Converters I V = V , V = 0V 10 A DSS DS DSS GS High Current Switching Power T = 150C 750 A J Supplies R V = 10V, I = 100A, Notes 1 & 2 1.6 m Battery Powered Electric Motors DS(on) GS D Resonant-Mode Power Supplies Electronics Ballast Application Class D Audio Amplifiers 2009 IXYS CORPORATION, All Rights Reserved DS100218(12/09)IXTH500N04T2 IXTT500N04T2 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 75 125 S fs DS D C 25 nF iss P C V = 0V, V = 25V, f = 1MHz 4410 pF 1 2 3 oss GS DS C 970 pF rss R Gate Input Resistance 1.1 Gi t 37 ns d(on) Resistive Switching Times t 16 ns e r V = 10V, V = 0.5 V , I = 200A GS DS DSS D t 68 ns Terminals: 1 - Gate 2 - Drain d(off) R = 1 (External) 3 - Source Tab - Drain G t 44 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 405 nC g(on) A 4.7 5.3 .185 .209 Q V = 10V, V = 0.5 V , I = 0.5 I 105 nC A 2.2 2.54 .087 .102 gs GS DS DSS D D25 1 A 2.2 2.6 .059 .098 2 Q 118 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.15 C/W thJC b 2.87 3.12 .113 .123 2 R TO-247 0.21 C/W C .4 .8 .016 .031 thCH D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Source-Drain Diode L 19.81 20.32 .780 .800 L1 4.50 .177 Symbol Test Conditions Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 I V = 0V 500 A S GS S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 1500 A SM JM TO-268 (IXTT) Outline V I = 100A, V = 0V, Note 1 1.2 V F GS SD t 84 ns rr I = 100A, V = 0V F GS I 3.1 A -di/dt = 100A/s RM V = 20V Q R 130 nC RM Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Includes lead resistance. Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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