TM TrenchP V = - 100V IXTY26P10T DSS I = - 26A Power MOSFET IXTA26P10T D25 R 90m DS(on) IXTP26P10T P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C - 100 V DSS J S V T = 25 C to 150 C, R = 1M - 100 V DGR J GS D (Tab) V Continuous 15 V GSS TO-220 (IXTP) V Transient 25 V GSM I T = 25 C - 26 A D25 C I T = 25 C, Pulse Width Limited by T - 80 A DM C JM G D D (Tab) I T = 25 C - 26 A S A C E T = 25 C 300 mJ AS C P T = 25 C 150 W G = Gate D = Drain D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Avalanche Rated Weight TO-252 0.35 g Extended FBSOA TO-263 2.50 g Fast Intrinsic Diode TO-220 3.00 g Low R and Q DS(ON) G Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings High Power Density BV V = 0V, I = - 250A -100 V DSS GS D V V = V , I = - 250A - 2.5 - 4.5 V GS(th) DS GS D Applications I V = 15V, V = 0V 50 nA GSS GS DS High-Side Switching I V = V , V = 0V -10 A Push Pull Amplifiers DSS DS DSS GS T = 125C - 250 A DC Choppers J Automatic Test Equipment R V = -10V, I = 0.5 I , Note 1 90 m DS(on) GS D D25 Current Regulators Battery Charger Applications 2017 IXYS CORPORATION, All Rights Reserved DS100291B(8/17)IXTY26P10T IXTA26P10T IXTP26P10T Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 10 17 S fs DS D D25 C 3820 pF iss C V = 0V, V = - 25V, f = 1MHz 280 pF oss GS DS C 93 pF rss t 20 ns d(on) Resistive Switching Times t 15 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 37 ns d(off) R = 3 (External) G t 11 ns f Q 52 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 16 nC gd R 0.83 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 26 A S GS I Repetitive, Pulse Width Limited by T -104 A SM JM V I = I , V = 0V, Note 1 -1.5 V SD F S GS t 70 ns rr I = 0.5 I , -di/dt = -100A/ s F D25 Q 210 nC RM V = - 50V, V = 0V R GS I - 6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537