X-On Electronics has gained recognition as a prominent supplier of MDD250-08N1 discrete semiconductor modules across the USA, India, Europe, Australia, and various other global locations. MDD250-08N1 discrete semiconductor modules are a product manufactured by IXYS. We provide cost-effective solutions for discrete semiconductor modules, ensuring timely deliveries around the world.

MDD250-08N1 IXYS

MDD250-08N1 electronic component of IXYS
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Part No.MDD250-08N1
Manufacturer: IXYS
Category:Discrete Semiconductor Modules
Description: IXYS Discrete Semiconductor Modules 250 Amps 800V
Datasheet: MDD250-08N1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 105.183
5 : USD 101.894
10 : USD 101.4
25 : USD 96.668
50 : USD 96.564
100 : USD 96.564
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
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Type
Vf - Forward Voltage
Vr - Reverse Voltage
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Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
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Hts Code
Mxhts
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We are delighted to provide the MDD250-08N1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDD250-08N1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

MDD 250 I = 2x 450 A FRSM High Power I = 2x 290 A FAVM Diode Modules V = 1200-1600 V RRM 3 1 2 V V Type RSM RRM V V 1300 1200 MDD 250-12N1 1500 1400 MDD 250-14N1 1700 1600 MDD 250-16N1 E72873 Features Symbol Conditions Maximum Ratings Direct copper bonded Al O ceramic 2 3 I T = T 450 A FRMS VJ VJM base plate I T = 100C 180 sine 290 A FAVM C Planar passivated chips I T = 45C t = 10 ms (50 Hz) 11 kA FSM VJ Isolation voltage 3600 V~ V = 0 t = 8.3 ms (60 Hz) 11,7 kA R UL registered, E 72873 T = T t = 10 ms (50 Hz) 9 kA VJ VJM Applications V = 0 t = 8.3 ms (60 Hz) 9,6 kA R 2 2 I t T = 45C t = 10 ms (50 Hz) 605 kA s Supplies for DC power equipment VJ 2 V = 0 t = 8.3 ms (60 Hz) 560 kA s DC supply for PWM inverter R Field supply for DC motors 2 T = T t = 10 ms (50 Hz) 405 kA s VJ VJM Battery DC power supplies 2 V = 0 t = 8.3 ms (60 Hz) 380 kA s R T -40...+150 C VJ Advantages T 150 C VJM Space and weight savings T -40...+125 C stg Simple mounting V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Improved temperature and power cycling I < 1 mA t = 1 s 3600 V~ ISOL Reduced protection circuits M Mounting torque (M5) 2.5 - 5 Nm d Terminal connection torque (M8) 12 - 15 Nm Weight Typical including screws 320 g Symbol Conditions Characteristics Values I V = V T = T 40 mA RRM R RRM VJ VJM V I = 600 A T = 25C 1.3 V F F VJ V For power-loss calculations only 0.75 V T0 r T = T 0.75 mW t VJ VJM R per diode DC current 0.129 K/W thJC per module other values 0.065 K/W R per diode DC current see Fig. 6/7 0.169 K/W thJK per module 0.0845 K/W Q T = 125C I = 400 A -di/dt = 50 A/s 760 C S VJ F I 275 A RM d Creeping distance on surface 12.7 mm S d Creepage distance in air 9.6 mm A 2 a Maximum allowable acceleration 50 m/s Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20150910a 2015 IXYS All rights reserved 1 - 4MDD 250 Dimensions in mm (1 mm = 0.0394) 42.5 35 28.5 M8x16 hex SW13 65 x 57 116 80 6 max. 12.4 5.5 Threaded spacer for higher Anode / Cathode construction: Type ZY 250 (material brass) IXYS reserves the right to change limits, test conditions and dimensions. 20150910a 2015 IXYS All rights reserved 2 - 4 0.25 4 5 6 7 4.5 38 32 60

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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