Product Information

2N7002

2N7002 electronic component of JSMSEMI

Datasheet
60V 115mA 1.2Ω@10V,500mA 200mW 2.1V@250uA 4pF@25V N Channel 20pF@25V +150℃@(Tj) SOT-23 MOSFETs ROHS
Manufacturer: JSMSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0178 ea
Line Total: USD 0.89

196667 - Global Stock
Ships to you between
Thu. 02 May to Tue. 07 May
MOQ: 50  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
159177 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 50
Multiples : 50

Stock Image

2N7002
JSMSEMI

50 : USD 0.0104
500 : USD 0.0079
3000 : USD 0.0069
6000 : USD 0.006
24000 : USD 0.0058
45000 : USD 0.0055

Read More Specifications

     
Manufacturer
Product Category
Category
Datasheet
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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Additional Infomation About Product

The 2N7002 is an N-Channel enhancement-mode metal-oxide-semiconductor field effect transistor (MOSFET) manufactured by JSMSEMI. It offers a maximum drain-source voltage of 60V, a maximum drain current of 115mA, a drain-source breakdown voltage of 1.2V@10V, a maximum drain power of 200mW, and a gate-source breakdown voltage of 2.1V@250uA. It also has a total gate-source capacitance of 4pF@25V, a total drain-source capacitance of 20pF@25V, and a maximum operating temperature of +150°C (Tj). The device is packaged in SOT-23 MOSFETs and is RoHS Compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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