Product Information

SI4435DY

SI4435DY electronic component of KEXIN

Datasheet
MOSFET P Trench 30V 8.8A 3V @ 250uA 20 mΩ @ 8A,10V SOP8 RoHS
Manufacturer: KEXIN
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1954 ea
Line Total: USD 0.98

3099 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
4670 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 5
Multiples : 5

Stock Image

SI4435DY
KEXIN

5 : USD 0.1334
50 : USD 0.1095
150 : USD 0.0975
500 : USD 0.0886
2500 : USD 0.0814
5000 : USD 0.0777

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SI4435DY is an MOSFET manufactured by KEXIN that is designed to provide high current and low gate charge. It features a P-Trench 30V, 8.8A 3V @ 250uA 20mO @ 8A and 10V SOP8 RoHS package. This device is ideal for all switching and linear applications that require a low on-resistance and fast switching time. It provides a low gate threshold voltage, low drain-source on resistance, and a high breakdown voltage. With its low gate charge characteristics, it is suitable for high current applications such as battery powered devices, solar systems, and automotive applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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