Product Information

HMMC-5200

HMMC-5200 electronic component of Keysight

Datasheet
RF Amp Module Single Gain Amp 20GHz Chip
Manufacturer: Keysight
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 32.0026 ea
Line Total: USD 1600.13

0 - Global Stock
MOQ: 50  Multiples: 50
Pack Size: 50

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0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 50
Multiples : 50

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HMMC-5200
Keysight

50 : USD 47.909

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Additional Infomation About Product

Keysight Technologies HMMC-5200 DC20 GHz HBT Series Shunt Ampliefi r 1GC1-8000 Data Sheet Features High bandwidth, F : 1 dB 21 GHz typical Moderate gain: 9.5 dB 1 dB 1.5 GHz P 1.5 GHz: 1 dB 12.5 dBm typical Low l/f noise corner: < 20 kHz typical Single supply operation: > 4.75 volts 44 mA typical Low power dissipation: 190 mW typical for chip02 Keysight HMMC-5200 DC20 GHz HBT Series Shunt Amplifier Data Sheet Description The HMMC-5200 is a DC to 20 GHz, 9.5 dB gain, feedback amplifier designed to be used as a cascadable gain block for a variety of applications. The device consists of a modified Darlington feedback pair which reduces the sensitivity to process variations and provides 50 ohm input/output port matches. Furthermore, this amplifier is fabricated using WPTCs Heterojunction Bipolar Transistor (HBT) process which provides excellent process uniformity, reliability and 1/f noise performance. The device requires a single positive supply voltage and generally operates Class-A for good distortion performance. 1 Absolute Maximum Ratings Symbol Parameters/conditions Min Max Units Chip Size: V VDC pad voltages 8.0 Volts CC 410 x 460 m (16.1 x 18.1 mils) V Output pad voltages 3.5 Volts PAD Chip Size Tolerance: 10 m (0.4 mils) P RF input power, continuous +6 dBm in Chip Thickness: T Junction temperature +150 C J 127 15 m (5 0.6 mils) RF Pad Dimensions: T Operating temperature 55 +85 C op 70 x 70 m (2.8 x 2.8 mils) T Storage temperature 65 +170 C st or larger T Maximum assembly temperature +300 C max 1 Operation in excess of any one of these ratings may result in permanent damage to this device. For normal operation, all combined bias and thermal conditions should be chosen such that the maximum junction temperature (T ) is not exceeded. T = 25C except for T , T , and T J A op st max

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